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D45H2

Description
PNP EXPITAXIAL SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size108KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

D45H2 Overview

PNP EXPITAXIAL SILICON TRANSISTOR

D45H2 Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)10 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
UTC D45H2
PNP EXPITAXIAL SILICON TRANSISTOR
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D45H2 is a general purpose power application
and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
1
TO-220
1:BASE
2:COLLECTOR
3:EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector to Emitter Voltage
Emitter To Base Voltage
Collector Current(DC)
Collector Dissipation(Tc=25°C)
Collector Dissipation(Ta=25°C)
Junction Temperature
Storage Temperature
*PW<=10mS,Duty Cycle<=50%
SYMBOL
V
CEO
V
EBO
I
C
Pc
Pc
T
j
T
stg
VALUE
-30
-5
-10
50
1.67
150
-55 ~ +150
UNIT
V
V
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff current
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
SYMBOL
I
CES
I
EBO
V
CE
(SAT)
V
BE
(SAT)
h
FE1
F
T
C
CB
ton
tstg
tf
TEST CONDITIONS
V
CE
=Rated ; V
CEO
,V
EB
=0
V
EB
=-5V,Ic=0
I
C
=-10A,I
B
=-0.1A
I
C
=-10A,I
B
=-1A
I
C
=-10A,V
CE
=-1V
V
CE
=-10V,I
C
=-0.5A
VCB=-10V,f=1MHZ
Ic=-5A,I
B
=-0.5A
I
B
=-0.5A
MIN
TYP
MAX
-10
1
-1
-1.5
UNIT
µA
µA
V
V
MHZ
PF
nS
nS
nS
100
40
230
135
500
100
UTC
UNISONIC TECHNOLOGIES CO. LTD
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