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D65H2

Description
PNP EXPITAXIAL SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size47KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

D65H2 Overview

PNP EXPITAXIAL SILICON TRANSISTOR

D65H2 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Base Number Matches1
UTC D65H2
PNP EXPITAXIAL SILICON TRANSISTOR
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D65H2 is a general purpose power application
and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
1
TO-220
1:BASE
2:COLLECTOR
3:EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector to Emitter Voltage
Emitter To Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Dissipation(Tc=25°C)
Collector Dissipation(Ta=25°C)
Junction Temperature
Storage Temperature
*PW<=10mS,Duty Cycle<=50%
SYMBOL
V
CEO
V
EBO
I
C
I
C
Pc
Pc
T
j
T
stg
VALUE
-30
-5
-15
-25
50
1.67
150
-55 ~ +150
UNIT
V
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff current
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
SYMBOL
I
CES
I
EBO
V
CE
(SAT)
V
BE
(SAT)
h
FE1
F
T
C
CB
ton
tstg
tf
TEST CONDITIONS
V
CE
=Rated ; V
CEO
,V
EB
=0
V
EB
=-5V,Ic=0
I
C
=-10A,I
B
=-0.1A
I
C
=-10A,I
B
=-1A
I
C
=-10A,V
CE
=-1V
V
CE
=-10V,I
C
=-0.5A
VCB=-10V,f=1MHZ
Ic=-5A,I
B
=-0.5A
I
B
=-0.5A
MIN
TYP
MAX
-10
-10
0.6
-1.5
UNIT
µA
µA
V
V
MHZ
PF
nS
nS
nS
100
40
350
150
600
120
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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