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DTA115T

Description
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTOR)
CategoryDiscrete semiconductor    The transistor   
File Size65KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

DTA115T Overview

PNP DIGITAL TRANSISTOR (BUILT-IN RESISTOR)

DTA115T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
UTC DTA115T
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTOR)
FEATURES
PNP DIGITAL TRANSISTOR
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
2
1
3
EQUIVALENT CIRCUIT
B
R
1
C
MARKING
SOT-23
AB5T
E
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Pc
Tj
Tstg
RATINGS
-50
-50
-5
-100
200
150
-55~+150
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
* Transition frequency of the device
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
h
FE
R1
f
T
TEST CONDITIONS
Ic=-50µA
Ic=-1mA
I
E
=-50µA
V
CB
=-50V
V
EB
=-4V
Ic=-1mA, I
B
= -0.1mA
V
CE
=-5V, Ic= -1mA
V
CE
=-10V, I
E
=5mA, f=100MHz
*
MIN
-50
-50
-5
TYP MAX UNIT
V
V
V
µA
µA
V
MHz
100
70
250
100
250
-0.5
-0.5
-0.3
600
130
UTC
UNISONIC TECHNOLOGIES CO. LTD
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