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DTA123Y

Description
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
CategoryDiscrete semiconductor    The transistor   
File Size100KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

DTA123Y Overview

PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

DTA123Y Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.5
Maximum collector current (IC)0.1 A
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)33
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
UTC DTA123Y
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
PNP DIGITAL TRANSISTOR
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
*The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input They also
have the advantage of almost completely eliminating
parasitic effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
1
2
3
EQUIVALENT CIRCUIT
IN
R1
OUT
MARKING
SOT-23
R2
GND (+)
IN
GND (+)
OUT
AC3Y
1: GND
2: IN
3: OUT
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CC
V
IN
I
O
I
C(max)
P
D
T
j
T
stg
RATINGS
-50
-12 ~ +5
-100
-100
200
150
-55 ~ +150
UNIT
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
*Transition frequency of the device
SYMBOL
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
TEST CONDITIONS
Vc
C
= -5V, I
O
=-100μA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
I
= -10mA / -0.5 mA
V
I
= -5V
V
CC
= -50V, V
I
=0V
V
O
= -5V, I
O
= -10mA
MIN
-3
TYP
MAX UNIT
-0.3
-0.3
-3.8
-0.5
V
V
mA
μA
MHz
33
1.54
3.6
V
CE
= -10 V, I
E
= 5mA, f=100MHz*
2.2
4.5
250
2.86
5.5
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-070,A

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