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DTC114Y

Description
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
CategoryDiscrete semiconductor    The transistor   
File Size108KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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DTC114Y Overview

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

DTC114Y Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompli
UTC DTC114Y
.
NPN DIGITAL TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
* The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
* Only the on/off conditions need to be set for operation,
making device design easy.
2
1
3
EQUIVALENT CIRCUIT
IN
R
1
OUT
MARKING
SOT-23
R
2
GND
CB4Y
1: GND
2: IN
3: OUT
IN
GND
OUT
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25℃)
PARAMETER
Supply voltage
Input voltage
Output current
Power Dissipation
Junction temperature
Storage temperature
SYMBOL
V
CC
V
IN
I
O
I
C (Max.)
P
D
T
j
Tstg
RATINGS
50
-6 ~ +40
70
100
200
150
-55 ~ +150
UNIT
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(T
a
= 25℃)
PARAMETER
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
* Transition frequency of the device
SYMBOL
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
R
1
R
2
/R
1
f
T
TEST CONDITIONS
V
CC
=5V, I
O
=100μA
V
O
=0.3V, I
O
=1mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=5mA
MIN
1.4
TYP
MAX UNIT
0.3
V
V
mA
μA
KΩ
MHz
0.1
0.3
0.88
0.5
13
5.7
68
7
3.7
*
V
CE
=10V, I
E
=−5mA, f=100MHz
10
4.7
250
UTC
UNISONIC TECHNOLOGIES CO. LTD
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