DTC115T datasheet, PDF - EEWORLD Datasheet

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DTC115T: DescriptionNPN DIGITAL TRANSISTOR (BUILT-IN RESISTOR); CategoryDiscrete semiconductor The transistor; File Size65KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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DTC115T Overview

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTOR)

DTC115T Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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UTC DTC115T

NPN DIGITAL TRANSISTOR

(BUILT-IN RESISTOR)

FEATURES

NPN DIGITAL TRANSISTOR

*Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistors.

*The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input

They also have the advantage of almost completely

eliminating parasitic effects.

*Only the on / off conditions need to be set for operation,

making device design easy.

2

1

3

EQUIVALENT CIRCUIT

R

1

B

C

MARKING

SOT-23

CB5T

E

1: EMITTER

2: BASE

3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Storage temperature

SYMBOL

V

CBO

V

CEO

V

EBO

Ic

Pc

Tj

Tstg

RATING

50

5

100

200

150

-55½+150

UNIT

V

mA

mW

℃

ELECTRICAL CHARACTERISTICS

(Ta=25°C, unless otherwise specified)

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

* Transition frequency of the device

SYMBOL

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(

sat

)

h

FE

R1

f

T

TEST CONDITIONS

Ic=50µA

Ic=1mA

I

E

=50µA

V

CB

=50V

V

EB

=4V

Ic=1mA, I

B

=0.1mA

V

CE

=5V, Ic=1mA

V

CE

=10V, I

E

=-5mA, f=100MHz

*

MIN

50

5

TYP

MAX

UNIT

V

µA

V

kΩ

MHz

100

70

250

100

250

0.5

0.3

600

130

UTC

UNISONIC TECHNOLOGIES CO. LTD

1

QW-R206-063,A

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