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DTC123E-AE3-6-R

Description
DIGITAL TRANSISTORS (BUILT- IN RESISTORS)
CategoryDiscrete semiconductor    The transistor   
File Size185KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

DTC123E-AE3-6-R Overview

DIGITAL TRANSISTORS (BUILT- IN RESISTORS)

DTC123E-AE3-6-R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
UNISONIC TECHNOLOGIES CO., LTD
DTC123E
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
NPN EPITAXIAL SILICON TRANSISTOR
3
2
3
1
SOT-23
EQUIVALENT CIRCUIT
R1
IN
R2
OUT
2
3
1
SOT-323
2
GND
1
SOT-523
*Pb-free plating product number:DTC123EL
IN
GND
OUT
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTC123E-AE3-6-R
DTC123EL-AE3-6-R
DTC123E-AL3-6-R
DTC123EL-AL3-6-R
DTC123E-AN3-6-R
DTC123EL-AN3-6-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
Tape Reel
DTC123EL-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
CC3
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-085,A

DTC123E-AE3-6-R Related Products

DTC123E-AE3-6-R DTC123E DTC123E-AL3-6-R DTC123E-AN3-6-R DTC123EL-AN3-6-R DTC123EL-AE3-6-R DTC123EL-AL3-6-R
Description DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS) DIGITAL TRANSISTORS (BUILT- IN RESISTORS)
Is it Rohs certified? incompatible - incompatible incompatible conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli - compli compli compli compli compli
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 20 - 20 20 20 20 20
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 - 1 1 1 1 1
Number of terminals 3 - 3 3 3 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W - 0.2 W 0.15 W 0.15 W 0.2 W 0.2 W
surface mount YES - YES YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz - 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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