EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND256-M

Description
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
File Size170KB,23 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet View All

NAND256-M Overview

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
Supply voltages
– V
DDF
= 1.7V to 1.95V or 2.5V to 3.6V
– V
DDD
= V
DDQD
= 1.7V to 1.9V
Electronic Signature
ECOPACK
®
packages
Temperature range
– -30 to 85°C
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm
(1)
(1) Preliminary specifications.
Fast Block Erase
– Block erase time: 2ms (typ)
Status Register
Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
Flash Memory
NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
Page Read/Program
– Random access: 15µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
LPSDRAM
Interface: x16 or x 32 bus width
Deep Power Down mode
1.8v LVCMOS interface
Quad internal Banks controlled by BA0 and
BA1
Automatic and controlled Precharge
Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
Wrap sequence: sequential/interleave
Burst Termination by Burst Stop command and
Precharge command
August 2006
Rev 5
1/23
www.st.com
2
Beginner's Guide to DSP
May I ask what is going on in the picture? I am using TI's routines. After the board is connected, I click file->workspace->load space and an error occurs. Does anyone know what is going on? ?...
老牛18岁 Microcontroller MCU
Interrupt issues under MPC
I am working on MPC8260. Currently, I want to add an interrupt handler for DMA. The MPC8260 reference manual says that the interrupt number of IDMA1 is 6. I use the following function: intConnect(INUM...
freejames Embedded System
MT8888 and telephone line interface
Can anyone provide the interface circuit between MT8888 and telephone line?...
Qd650 Embedded System
EMI/EMC Design Tips
Detailed analysis of EMI/EMC design techniques...
zhdming123 PCB Design
Water Leakage Location Alarm Based on Single Chip Microcomputer
XW 1000 water leakage sensing line, when there is water contact, the two sensing lines will be short-circuited, resulting in a change in current. According to the proportional relationship between res...
zhimingli Microchip MCU
Please advise on the transplantation of STM32 in UCOSII
① Is it necessary to initialize the system clock? ② When does the task switching detection occur? Because I see that they have no system delay or anything, there are only two tasks....
乱起东城 stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1322  132  2128  2552  2081  27  3  43  52  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号