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2SB1243

Description
Power Transistor (−60V, −3A)
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SB1243 Overview

Power Transistor (−60V, −3A)

2SB1243 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)56
JESD-609 codee1
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Nominal transition frequency (fT)70 MHz
Base Number Matches1
2SB1184 / 2SB1243
Transistors
Power Transistor (−60V,
−3A)
2SB1184 / 2SB1243
Features
1) Low V
CE(sat)
.
V
CE(sat)
= -0.5V (Typ.)
(I
C
/I
B
= -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
External dimensions
(Unit : mm)
2SB1184
1.5±0.3
2SB1243
C0.5
2.3
+0.2
−0.1
0.5±0.1
4.4
±
0.2
14.5
±
0.5
0.9
6.5±0.2
5.1
+0.2
−0.1
6.8
±
0.2
2.5
±
0.2
5.5
+0.3
−0.1
9.5±0.5
0.9
1.5
2.5
0.75
0.65±0.1
0.9
0.65Max.
Structure
Epitaxial planar type
PNP silicon transistor
0.55±0.1
2.3±0.2 2.3±0.2
1.0±0.2
(1)
(2)
(3)
2.54 2.54
0.5
±
0.1
1.0
(1) (2) (3)
1.05
0.45
±
0.1
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM :
ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−60
−50
−5
−3
1
15
1
150
−55
to 150
100mm
2
or larger.
Unit
V
V
V
A (DC)
W
W (T
C
=25°C)
W
°C
°C
∗1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
2SB1184
dissipation
2SB1243
Junction temperature
Storage temperature
1 Printed circuit board, 1.7mm thick, collector copper plating
Rev.A
1/3

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