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2SB1708

Description
Low frequency amplifier
CategoryDiscrete semiconductor    The transistor   
File Size52KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SB1708 Overview

Low frequency amplifier

2SB1708 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-96
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)270
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
2SB1708
Transistors
Low frequency amplifier
2SB1708
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) A collector current is large. (3A)
2) V
CE(sat)
≤ −250mV
At I
C
=
1.5A / I
B
=
30mA
(1) Base
(2) Emitter
(3) Collector
(3)
1.6
2.8
0~0.1
(1)
(2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Limits
Symbol
−30
V
CBO
−30
V
CEO
Collector-emitter voltage
−6
V
EBO
Emitter-base voltage
−3
I
C
Collector current
−6
I
CP
500
P
C
Power dissipation
Junction temperature
Tj
150
Range of storage temperature
Tstg
−55
to
+150
Parameter
Collector-base voltage
∗Single
pulse, P
W
=1ms
Packaging specifications
Unit
V
V
V
A
A
mW
°C
°C
Package
Type
Code
Basic ordering unit (pieces)
2SB1708
Taping
TL
3000
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−30
−30
−6
270
Typ.
−180
200
40
Max.
−100
−100
−250
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
I
C
=−10µA
I
C
=−1mA
I
E
=−10µA
V
CB
=−30V
V
EB
=−6V
I
C
=−1.5A,
I
B
=−30mA
V
CE
=−2V,
I
C
=−200mA
V
CE
=−2V,
I
E
=200mA,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
Rev.B
0.3~0.6
1/2

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