2SD1383K
Transistors
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD852.
Packaging specifications
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD1383K
SMT3
B
W
∗
T146
3000
(1)Emitter
(2)Base
(3)Collector
Each lead has same dimensions
(2)
External dimensions
(Unit : mm)
2SD1383K
2.9
0.4
(3)
1.6
2.8
1.1
0.8
(1)
0.95 0.95
0.15
1.9
∗
Denotes h
FE
Circuit diagram
C
B
R
BE
4kΩ
E : Emitter
B : Base
C : Collector
E
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
−55
to
+150
Unit
V
∗1
V
V
A (DC)
A (Pulse)
∗2
W
°C
°C
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
R
BE
=0Ω
∗2
Single pulse Pw=10ms
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗
1 Measured using pulse current.
∗
2 Transition frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
250
3
Max.
−
−
−
1
1
−
1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
I
C
=100µA
I
C
= −1mA
, R
BE
=0Ω
I
E
=100µA
V
CB
=24V
V
EB
=4.5V
V
CE
=5V,
I
C
=0.1A
I
C
=200mA,
I
B
=0.4mA
∗
1
V
CE
=5V,
I
E
= −10mA,
f=100MHz
∗
2
V
CB
=10V,
I
E
=0A,
f=1MHz
0.3Min.
Rev.B
1/2
2SD1383K
Transistors
Electrical characteristic curves
125
500
POWER DISSIPATION : P
C
/P
CMax
(%)
V
CE
=6V
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
I
B
=10
µ
A
Ta=25°C
100
200
100
Ta
=2
5°C
9
µ
A
8
µ
A
50
75
Ta=
−55°C
50
20
10
5
2
Ta
=1
00
°C
7
µ
A
6
µ
A
5µA
4µA
50
25
0
0
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
0
1
3µA
2
3
4
5
AMBIENT TEMPERATURE : Ta (°C)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Power dissipation curves
Fig.2 Ground emitter propagation characteristisc
Fig.3 Ground emitter output characteristics
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=25°C
50000
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
V
CE
=5V
I
C
/I
B
=500
2
Ta=
−55°C
5V
20000
10000
5000
V
CE
=3V
2000
1000
500
5
10
20
50 100
200
500 1000 2000
100000
50000
°
C
00
=1
Ta
°
C
25
1
0.5
100°C
25°C
20000
10000
5000
C
−
55
°
0.2
5
10
20
50 100
200
500 1000 2000
0.1
0.5
1
2
5
100
200
500 1000 2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current (
Ι
)
Fig.5 DC current gain vs. collector current (
ΙΙ
)
Fig.6 Collector-emitter saturation voltage
vs. collector current
TRANSISION FREQUWNCY : f
T
(MHz)
OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
V
CE
=6V
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25°C
f=1MHz
I
E
=0A
20
10
Ta=25°C
f=1MHz
I
E
=0A
500
20
200
100
10
5
5
50
2
2
−1
−2
−5
−10
−20
−50 −100
1
2
5
10
20
50
1
1
2
5
10
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Microcontroller MCU
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