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2SC5876_1

Description
Medium power transistor (60V, 0.5A)
File Size57KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SC5876_1 Overview

Medium power transistor (60V, 0.5A)

2SC5876
Transistor
Medium power transistor (60V, 0.5A)
2SC5876
Features
1) High speed switching. (Tf : Typ. : 80ns at I
C
= 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 100mA, I
B
= 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2088
External dimensions
(Unit : mm)
(1)
(3)
(2)
0.3
1.25
2.1
0.15
0.2
(1)Emitter
(2)Base
(3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : VS
Applications
Small signal low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SC5876
Taping
T106
3000
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Pw=10ms
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
0.5
1.0
200
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
1
2
0.7
0.9
1.3
2.0
UMT3
0.65 0.65
Rev.A
1/3

2SC5876_1 Related Products

2SC5876_1 2SC5876
Description Medium power transistor (60V, 0.5A) Medium power transistor (60V, 0.5A)

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