2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
120
80
5
1
2
2SD1898
Collector power
dissipation
0.5
2
P
C
1
10
0.3
1
Tj
Tstg
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
∗1
W
W
W
W (Tc=25°C)
W
W
°C
°C
∗2
∗3
2SD1733
2SD1768S
2SD1863
Junction temperature
Storage temperature
∗1
Pw=20ms, duty=1 / 2
∗2
Printed circuit board 1.7mm thick, collector copper plating 1cm
2
or larger.
∗3
When mounted on a 40×40×0.7mm ceramic board.
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
2SD1863
DC current
2SD1733, 2SD1898
transfer ratio
2SD1768S
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
120
80
5
−
−
120
Typ.
−
−
−
−
−
−
−
−
0.15
100
20
Max.
−
−
−
1
1
390
390
390
0.4
−
−
Unit
V
V
V
µA
µA
−
−
−
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=100V
V
EB
=4V
Conditions
h
FE
82
120
V
CE
=3V,
I
C
=0.5A
∗
V
CE(sat)
f
T
Cob
−
−
−
I
C
/I
B
=500mA/20mA
V
CE
=10V,
I
E
=−50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
2/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!
Packaging specifications and h
FE
Package
Code
Type
2SD1898
2SD1733
2SD1768S
2SD1863
h
FE
PQR
PQR
QR
R
−
−
−
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TL
2500
−
TP
5000
−
−
TV2
2500
−
−
−
h
FE
values are classified as follows :
Item
h
FE
P
82~180
Q
120~270
R
180~390
!
Electrical characteristic curves
1000
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
V
CE
=5V
COLLECTOR CURRENT : I
C
(
A)
Ta=25°C
1.0
0.8
0.6
0.4
1mA
0.2
0
0
I
B
=0mA
10
6mA
5mA
4mA
3mA
2mA
DC CURRENT GAIN : h
FE
Ta=25°C
100
1000
V
CE
=3V
1V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : V
BE
(V)
2
4
6
8
0
0
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
2
5
10
20
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
10
100
1000
I
C
/I
B
=20/1
10/1
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
Ta=25°C
Ta=25°C
V
CE
=5V
1000
Ta=25°C
f=1MHz
I
E
=0A
Ic=0A
100
10
50 100 200 500 1000
1
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT :
−I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.5 Gain bandwidth product vs.
emitter current
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
Test/Measurement
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