2SD2679
Transistors
2A / 30V Bipolar transistor
2SD2679
Applications
Low frequency amplification, driver
External dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
Features
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(V
CE(sat)
≤
350mV at I
C
= 1.5A, I
B
= 75mA)
(1)Base
(1)
(2)
(3)
1.0
2.5
4.0
0.4
0.4
1.5
0.5
1.5
3.0
0.4
Structure
NPN epitaxial planar silicon transistor
(2)Collector
(3)Emitter
Abbreviated symbol : XZ
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
2
4
0.5
2
150
−55
to
+150
∗1
∗2
∗3
Packaging specifications
Unit
V
V
V
A
W
°C
°C
Package
Packaging type
Code
Part No.
2SD2679
Basic ordering unit (pieces)
MPT3
Taping
T100
1000
∗1
Pw=1ms, single pulse.
∗2
Each terminal mounted on a recommended land.
∗3
Mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗
Pulsed
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
∗
h
FE
f
T
Cob
Min. Typ. Max. Unit
30
30
6
−
−
−
270
−
−
−
−
−
−
−
180
−
280
20
−
−
−
100
100
370
680
−
−
nA
mV
−
pF
V
I
C
=1mA
I
C
=10µA
I
E
=10µA
V
CB
=30V
V
EB
=6V
Conditions
I
C
/I
B
=1.5A/75mA
V
CE
=2V, I
C
=200mA
V
CB
=10V , I
E
=0mA , f=1MHz
MHz V
CE
=2V, I
E
=
−200mA
, f=100MHz
1/2
2SD2679
Transistors
Electrical characteristics curves
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=125 C
V
CE
=−2V
Pulsed
10
I
C
/I
B
=20/1
Pulsed
10
I
C
/I
B
=20/1
Pulsed
DC CURRENT GAIN : h
FE
Ta=25 C
Ta=−25 C
1
Ta=−25 C
Ta=25 C
1
Ta=−25 C
Ta=25 C
Ta=125 C
0.1
Ta=125 C
100
10
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
0.1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Base-emitter saturation voltage
vs. collector current
TRANSITION FREQUENCY : f
T
(MHz)
V
CE
=−2V
Pulsed
Ta=125 C
Ta=25 C
COLLECTOR CURRENT : I
C
(A)
Ta=25 C
V
CE
=−2V
f= 100MHz
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
1000
1000
I
C
=0A
f=1MHz
Cob
Ta=25 C
1
0.1
Ta=−25 C
100
100
Cib
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
0.01
0.1
1
10
10
0.001
0.01
0.1
1
10
100
BASE TO EMITTER CURRENT : V
BE
(V)
EMITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.4 Grounded emitter propagation
characteristics
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
京公网安备 11010802033920号
EEWORLD
