2SK2504
Transistors
4V Drive Nch MOS FET
2SK2504
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
CPT3
6.5
5.1
2.3
0.5
Features
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
5.5
1.5
0.9
0.75
0.65
(1)Gate
(2)Drain
(3)Source
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
Abbreviated symbol : K2504
Applications
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SK2504
Taping
TL
2500
Inner circuit
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Reverse drain
current
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
I
DR
I
DRP
∗
P
D
Tch
Tstg
Limits
100
Unit
V
V
A
A
A
A
W
±20
5
20
5
20
20
150
−55
to
+150
Total power dissipation(Tc=25
°C
)
Channel temperature
Storage temperature
°C
°C
∗
Pw
≤
10µs, Duty cycle
≤
1%
Rev.A
2.5
1.5
9.5
1/5
2SK2504
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
∗
Min.
−
100
−
1.0
−
−
4.0
−
−
−
−
−
−
−
Typ.
−
−
−
−
0.18
0.25
−
520
175
60
5.0
20
50
20
Max.
Unit
nA
V
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
V
GS
=
±20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=100V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=2.5A,
V
GS
=10V
I
D
=2.5A,
V
GS
=4V
I
D
=2.5A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=2.5A,
V
DD
=50V
V
GS
=10V
R
L
=20Ω
R
G
=10Ω
±100
−
10
2.5
0.22
0.28
−
−
−
−
−
−
−
−
∗
Pw
≤
300
µ
s, Duty cycle
≤
1%
Rev.A
2/5
2SK2504
Transistors
Electrical characteristics curve
50
DRAIN CURRENT : I
D
(A)
DC
1
0.5
Tc
=
25°C
Single pulse
P
W
=
1
0
Op
e
ra
t
1m
m
s
7
6
5
4
3
2
1
4V
s
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
thi
(on)
in
DS
on by R
ati
10
per ited
O lim
is
5
a
re
sa
10
100µs
9
8
10V
8V
6V
5V
Ta
=
25°C
Pulsed
10
V
DS
=
10V
5
Pulsed
Ta=125°C
75°C
2
25°C
−25°C
1
0.5
0.2
0.1
0.05
0.02
ion
V
GS
=3V
0.1
1
5
10
50
100 200
0
0
1
2
3
4
5
0.01
0
1
2
3
4
5
6
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximum Safe Operating Area
Fig.2 Typical Output Characteristics
Fig.3 Typical Transfer Characteristics
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
−25
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
10V
l
D
=1mA
10
V
GS
=
10V
Pulsed
10
V
GS
=
4V
5
Pulsed
2
1
0.5
0.2
0.1
0.05
0.01
0.01
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
Ta=125°C
75°C
25°C
−25°C
1
Ta=125°C
75°C
25°C
−25°C
0.1
0
25
50
75
100 125
150
0.01
0.01
0.1
1
10
CHANNEL TEMPERATURE : Tch
(
°C
)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance
vs. Drain Current (
Ι
)
Fig.6 Static Drain-Source On-State Resistance
vs. Drain Current (
ΙΙ
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
Ta=25°C
Pulsed
0.6
FORWARD TRANSFER ADMITTANCE : Y
fS
(S)
0.6
V
GS
=
10V
Pulsed
100
V
DS
=
10V
50
Pulsed
20
0.5
0.4
0.3
I
D
=5A
0.4
10
5
2
l
D
=5A
0.2
Ta=
−25°C
25°C
75°C
125°C
2.5A
0.2
2.5A
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.1
0
−50 −25
0
0
5
10
15
20
0
25
50
75
100 125 150
0.5
1
2.0
5.0
10
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
Fig.8 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig.9 Forward Transfer Admittance
vs. Drain Current
Rev.A
3/5
2SK2504
Transistors
REVERSE DRAIN CURRENT : I
DR
(A)
REVERSE DRAIN CURRENT : I
DR
(A)
10
5
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
Ta
=25°C
Pulsed
10000
0V
2
1
0.5
0.2
0.1
0.05
0
1
0.5
CAPACITANCE : C
(pF)
V
GS
=10V
Ta
=
25°C
V
GS
=
0V
f
=
1MHz
1000
C
iss
C
oss
100
0.1
0.05
C
rss
0.5
1.0
1.5
0.01
0
0.5
1.0
1.5
10
0.1
1
10
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.10 Reverse Drain Current
vs. Source-Drain Voltage (
Ι
)
Fig.11 Reverse Drain Current
vs. Source-Drain Voltage (
ΙΙ
)
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
1000
500
SWITCHING TIME : t
(ns)
1000
200
100
t
d(off)
50
20
10
5
2
0.05
REVERSE RECOVERY TIME : trr
(ns)
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
Ta=25°C
di/dt=100A/µs
500 V
GS
=0V
Pulsed
t
f
t
r
100
50
t
d(on)
0.1
0.2
0.5
1
2
5
10
10
0.1
0.2
0.5
1
2
5
10
DRAIN CURRENT : I
D
(A)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.13
Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
Fig.14 Reverse Recovery Time
vs. Reverse Drain Current
10
NORMALIZED TRANSIENT : r
( t )
THERMAL RESISTANCE
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Tc=25°C
θ
th(ch-c)
(t)=r (t)
θ
th(ch-c)
θ
th(ch-c)
=6.25°C/W
PW
T
D=PW
T
0.001
10µ
100µ
1m
10m
100m
1
10
PULSE WIDTH : PW
(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Rev.A
4/5
2SK2504
Transistors
Switching characteristics measurement circuit
Pulse Width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.16 Switching Time Test Circuit
Fig.17 Switching Time Waveforms
Rev.A
5/5
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