UTC PZTA44/ 45
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
V
CEO
=400V(PZTA44)
V
CEO
=350V(PZTA45)
*Collector current up to 300mA
*Complement to PZTA94/93
*Collector Dissipation:
Pc(max)=2W
1
2
3
4
APPLICATION
*Telephone switching
*High voltage switch
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Operating temperature range applies unless otherwise specified)
PARAMETER
Collector-base voltage
PZTA44
PZTA45
Collector-emitter voltage
PZTA44
PZTA45
Emitter-base voltage
Collector dissipation(Ta=25°C
)
Collector dissipation(Tc=25°C
)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
RATING
500
400
UNIT
V
V
V
CEO
V
EBO
Pc
Pc
Ic
T
j
T
STG
400
350
6
625
2
300
150
-55 ~ +150
V
mW
W
mA
°C
°C
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PARAMETER
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
BV
CBO
ELECTRICAL CHARACTERISTICS
(Tj=25°C,unless otherwise specified)
TEST CONDITIONS
Ic=100µA,I
B
=0
500
400
BV
CEO
Ic=1mA,I
B
=0
400
350
6
0.1
0.1
µA
V
CE
=400V,I
B
=0
V
CE
=320V,I
B
=0
V
EB
=4V,Ic=0
V
CE
=10V,Ic=1mA
V
CE
=10V,Ic=10mA
V
CE
=10V,Ic=50mA
V
CE
=10V,Ic=100mA
Ic=1mA,I
B
=0.1mA
Ic=10mA,I
B
=1mA
Ic=50mA,I
B
=5mA
Ic=10mA,I
B
=1mA
V
CE
=20V,Ic=10mA,
f=100MHz
V
CB
=20V,I
E
=0
f=1MHz
0.5
0.5
0.1
40
50
45
40
240
V
V
µA
V
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
PZTA44
PZTA45
Collector-emitter breakdown voltage
PZTA44
PZTA45
Emitter-base breakdown voltage
Collector cut-off current
PZTA44
PZTA45
Collector cut-off current
PZTA44
PZTA45
Emitter cut-off current
DC current gain(note)
BV
EBO
I
CBO
I
E
=100µA,Ic=0
V
CB
=400V,I
E
=0
V
CB
=320V,I
E
=0
I
CES
I
EBO
h
FE
µA
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
V
BE
(sat)
f
T
Cob
0.4
0.5
0.75
0.75
50
7
V
V
MHz
pF
Note:Pulse test:PW<300µs,Duty Cycle<2%
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
1
10
Fig.2 Turn-on switching times
2
10
Fig.3 Turn-off switching times
H
FE
,DC current current gain
140
120
100
80
60
40
20
0
-20
-40
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
10
V
CE
=10V
Time(µs)
Time(µs)
V
CE
=150V
Ic/I
B
=10
Ta=25° C
V
BE
(OFF)=4V
0
10
V
CE
=150V
Ic/I
B
=10
Ta=25° C
1
10
T
s
0
10
T
f
T
f
T
d
2
10
-1
10
0
10
1
10
2
10
Ic,Collector current(mA)
Ic,Collector current(mA)
Ic,Collector current(mA)
Fig.4 Capacitance
3
10
1.0
Fig.5 ON Voltage
0.5
Fig.6 Collector saturation region
Collector-Emitter voltage(V)
0.8
Ta=25°
C
V
BE
(sat),Ic/I
B
=10
0.4
Capacitance(pF)
Ic=1mA
Ic=10mA
Ic=50mA
voltage(V)
2
10
Cib
0.6
0.3
V
BE
(ON),V
CE
=10V
0.4
0.2
1
10
Cob
0.2
V
CE
(sat),Ic/I
B
=10
0.1
0
10
-1
10
0
10
1
10
2
10
3
10
0
-1
10
0
10
1
10
2
10
3
10
0
Ta=25°
C
2
10
3
10
4
10
5
10
1
10
Collector voltage(V)
Ic,Collector current(mA)
Ib, base current(µA)
Fig.7 High Frequency
current gain
Small signal current gain,H
FE
2
10
4
10
Fig.8 Safe operating area
Valid Duty
Cycle<10%
1ms
1s
5
=2
Tc
Ic,Collector current(mA)
1
10
V
CE
=10V
f=10MHz
Ta=25° C
3
10
0.1ms
°
2
10
=
Ta
25
°
C
C
0
10
1
10
-1
10
-1
10
0
10
1
10
2
10
3
10
0
10
PZTA44
0
10
1
10
2
10
3
10
4
10
Ic,Collector current(mA)
Collector voltage(V)
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
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