UTC PZTA42/43
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
FEATURES
*Collector-Emitter voltage:
V
CEO
=300V(UTC PZTA42)
V
CEO
=200V(UTC PZTA43)
*High current gain
*Complement to UTC PZTA92/93
*Collector Power Dissipation:
Pc(max)=1000mW
1
2
3
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (
Ta=25°C)
PARAMETER
Collector-Base Voltage
UTC PZTA42
UTC PZTA43
Collector-Emitter Voltage
UTC PZTA42
UTC PZTA43
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
VALUE
300
200
UNIT
V
V
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
300
200
6
1000
500
150
-55 ~ +150
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
UTC PZTA42
UTC PZTA43
Collector-Emitter Breakdown Voltage
UTC PZTA42
UTC PZTA43
Emitter-Base Breakdown Voltage
SYMBOL
BV
CBO
TEST CONDITIONS
Ic=100µA,I
E
=0
MIN
300
200
TYP
MAX
UNIT
V
BV
CEO
Ic=1mA,I
B
=0
300
200
6
V
V
BV
EBO
I
E
=100µA,Ic=0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R207-005,B
UTC PZTA42/43
PARAMETER
Collector Cut-Off Current
UTC PZTA42
UTC PZTA43
Emitter Cut-Off Current
UTC PZTA42
UTC PZTA43
DC Current Gain(note)
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
I
CBO
V
CB
=200V,I
E
=0
V
CB
=160V,I
E
=0
I
EBO
V
BE
=6V,Ic=0
V
BE
=4V,Ic=0
V
CE
=10V,Ic=1mA
V
CE
=10V,Ic=10mA
V
CE
=10V,Ic=30mA
Ic=20mA,I
B
=2mA
Ic=20mA,I
B
=2mA
V
CE
=20V,Ic=10mA,
f=100MHz
V
CB
=20V,IE=0
f=1MHz
100
100
80
80
80
300
0.2
0.90
50
V
V
MHz
nA
100
100
nA
TEST CONDITIONS
MIN
TYP
MAX
UNIT
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
UTCPZTA42
UTCPZTA43
V
CE
(sat)
V
BE
(sat)
f
T
Ccb
3
4
pF
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
3
10
1
10
Fig.2 Saturation Voltage
Ic=10*I
B
VCE(sat),VBE(sat) (V)
DC current Gain,H
FE
V
CE
=10V
2
10
0
10
V
BE
(sat)
1
10
-1
10
V
CE
(sat)
0
10
10
0
10
1
10
2
-2
10
10
-1
10
0
10
1
10
2
10
3
Collector current, Ic(mA)
Collector current, Ic(mA)
Fig.3 Capacitance
2
10
3
10
Fig.4 Current Gain
Bandwidth product
VCE=20V
1
10
Current gain bandwidth
product(MHz)
2
I
E
=0
f=1MHz
2
10
-1
10
10
0
10
1
1
10
10
10
0
10
1
10
2
Collector-Base voltage(V)
Collector current, Ic(mA)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R207-005,B
UTC PZTA42/43
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R207-005,B
DSP and ARM Processors
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