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4128

Description
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
File Size123KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

UTC 4128
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
UTC 4128 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
* High switching speed
1
TO-126
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 4128L
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
RATINGS
400
200
7
5
40
150
-40 ~ +150
UNIT
V
V
V
A
W
ELECTRICAL CHARACTERISTICS
(Ta = 25℃)
PARAMETER
Collector-Emitter Maintenance Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Feature Frequency
SYMBOL
V
CEO (SUS)
V
(BR) CBO
V
(BR) EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE (sat)
tf
ts
f
T
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=400V, I
E
=0
V
CE
=200V, I
B
=0
V
EB
=7V, Ic=0
V
CE
=10V, Ic=0.5A
V
CE
=5V, Ic=2A
I
C
=1A, I
B
=0.2A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A
I
C
=2A, I
B1
= -I
B2
= 0.4A
I
C
=2A, I
B1
= -I
B2
= 0.4A
V
CE
=10V, Ic=0.5A
MIN
200
400
7
TYP
MAX
UNIT
V
V
V
µA
µA
µA
10
10
100
100
100
60
40
0.8
2
1.6
0.9
4
4
V
V
V
µs
µs
MHz
1
QW-R204-020,A
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
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