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STB60NF10

Description
80 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size346KB,15 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

STB60NF10 Overview

80 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

STB60NF10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)80 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
surface mountYES
STB60NF10
STB60NF10-1 - STP60NF10
N-channel 100V - 0.019Ω - 80A - TO-220 - D
2
PAK - I
2
PAK
STripFET™ II Power MOSFET
General features
Type
STB60NF10
STB60NF10-1
STP60NF10
V
DSS
(@Tjmax)
100V
100V
100V
R
DS(on)
<0.023Ω
<0.023Ω
<0.023Ω
I
D
3
80A
80A
80A
1
1
3
2
D²PAK
3
12
TO-220
Exceptional dv/dt capability
100% avalanche tested
I²PAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Internal schematic diagram
Applications
Switching application
Order codes
Part number
STB60NF10T4
STB60NF10-1
STP60NF10
Marking
B60NF10
B60NF10
P60NF10
Package
D²PAK
I²PAK
TO-220
Packaging
Tape & reel
Tube
Tube
September 2006
Rev 4
1/15
www.st.com
15
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Index Files: 2714  159  1406  2086  1685  55  4  29  42  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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