INFRA-RED EMITTING DIODES
AM2520F3C03
AM2520SF4C03
Features
SUBMINIATURE PACKAGE STYLE OF INFRA-RED LED.
AVAILABLE ON TAPE AND REEL.
COMPATIBLE WITH AUTOMATIC PLACEMENT
EQUIPMENT.
HIGH RELIABILITY AND LONG LIFETIME.
Package Dimensions
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
SF4 Made with Gallium Aluminum Arsenide Infrared
Emitting diodes.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subjected to change without notice.
Selection Guide
Iv (mW/s r )
@20mA *50mA
Min.
AM2520F3C03
GaAs
WATER CLEAR
2
*10
2
*3
Typ.
6
*15
4
*8
View in g
An g l e
2θ1/2
30°
30°
30°
30°
Par t No .
Di c e
L en s Ty p e
AM2520SF4C03
GaAlAs
WATER CLEAR
Note:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
AM2520F-1
Electrical / Optical Characteristics at T
)
=25°C
°
Item
F3
S F4
F3
S F4
F3
S F4
F3
S F4
F3
S F4
P/N
Sy m b o l
Ty p .
1.2
1.4
-
90
90
940
880
50
50
Max .
1.5
1.7
10
10
-
Un i t
Co n d i t i o n
Forward Voltage
VF
V
IF=20mA
Reverse Current
IR
uA
VR=5V
Junction Capacitance
Co
pF
V=0 f=1MHz
Peak Spectral Wavelength
lR
-
nm
IF=20mA
Spectral Bandwidth
∆λ
-
nm
IF=20mA
Absolute Maximum Ratings at T
)
=25°C
°
Item
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Note:
1.Ip Condiction : 1/10 Duty Cycle, 0.1ms Pluse Width.
Sy m b o l
Pd
IF
I
P
Max imu m Ratin g
100
50
1.2
5
-45~ +80
-45~ +80
Un i t s
mW
mA
A
V
°C
°C
VR
Topr
Tstg
AM2520F-2
AM2520F3C03,AM2520SF4C03 SMT Reflow Soldering Instructions
AM2520F3C03,AM2520SF4C03 Recommended Soldering Pattern
(Units : mm)
AM2520F-4