APM3095P
P-Channel Enhancement Mode MOSFET
Features
•
-30V/-6A , R
DS(ON)
=95mΩ(typ.) @ V
GS
=-10V
R
DS(ON)
=140mΩ(typ.) @ V
GS
=-4.5V
Pin Description
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
G
D
S
Top View of TO-252
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
D
G
S
D
Ordering and Marking Information
APM 3095P
H a n d lin g C o d e
Tem p. R ange
P a c ka g e C od e
P-Channel MOSFET
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 3095P U :
A P M 3095P
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-30
±25
-12
-30
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
APM3095P
Absolute Maximum Ratings Cont.
Symbol
P
D
Parameter
Maximum Power Dissipation
T
A
=25°C
T
A
=100°C
T
J
T
STG
R
θjA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
(T
A
= 25°C unless otherwise noted)
Rating
50
20
150
-55 to 150
50
W
°C
°C
°C/W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
(T
A
= 25°C unless otherwise noted)
APM3095P
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
GS
=0V , I
DS
=-250µA
V
DS
=-24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±25V , V
DS
=0V
V
GS
=-10V , I
DS
=-6A
V
GS
=-4.5V , I
DS
=-3A
I
SD
=-1.25A , V
GS
=0V
V
DS
=-15V , I
DS
=-3A
V
GS
=-10V
V
DD
=-15V , I
DS
=-1A ,
V
GEN
=-10V , R
G
=6Ω
R
L
=15Ω
V
GS
=0V
-30
-1
-1
-1.5
95
140
-0.7
8
1.9
1.1
10
8
25
5
550
120
75
20
20
50
15
-2
±100
110
160
-1.3
13
V
µA
V
nA
mΩ
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
nC
ns
Output Capacitance
V
DS
=-25V
Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
2
www.anpec.com.tw
APM3095P
Typical Characteristics
Output Characteristics
10
-V
GS
=5,6,7,8,9,10V
Transfer Characteristics
10
8
8
-V
GS
=4V
-I
D
-Drain Current (A)
6
-I
D-
Drain Current (A)
6
4
-V
GS
=3V
4
T
J
=125°C
T
J
=-55°C
T
J
=25°C
2
2
0
0
2
4
6
8
10
0
0
1
2
3
4
5
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-I
DS
=250uA
On-Resistance vs. Drain Current
0.24
-V
GS(th)-
Threshold Voltage (V)
(Normalized)
R
DS(ON)
-On-Resistance (Ω)
1.25
1.00
0.75
0.50
0.25
0.00
-50
0.21
0.18
-V
GS
=4.5V
0.15
0.12
0.09
0.06
0.03
0.00
0
1
2
3
4
5
6
7
8
-V
GS
=10V
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
-I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
3
www.anpec.com.tw
APM3095P
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.30
-I
D
=3A
On-Resistance vs. Junction Temperature
2.00
-V
GS
=10V
-I
D
=6A
R
DS(ON)
-On-Resistance (Ω)
0.25
0.20
0.15
0.10
0.05
0.00
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0
2
4
6
8
10
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
-V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
800
700
-V
DS
=15V
9
-I
D
=3A
Capacitance
Frequency=1MHz
-V
GS
-Gate-Source Voltage (V)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Capacitance (pF)
600
500
400
300
200
100
0
0
5
10
15
Ciss
Coss
Crss
20
25
30
Q
G
- Gate Charge (nC)
-V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
4
www.anpec.com.tw
APM3095P
Typical Characteristics
Source-Drain Diode Forward Voltage
10
250
Single Pulse Power
-I
S
-Source Current (A)
200
Power (W)
1.2
1.4
150
1
T
J
=150°C
T
J
=25°C
100
50
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1E-3
0.01
0.1
1
10
100
1000
-V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
5
www.anpec.com.tw
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