TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
P
T
0.5
0.65
0.50
-65 to +200
W
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
75
6.0
800
Unit
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
Operating & Storage Junction Temperature Range
T
op
, T
stg
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
1.
2.
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Symbol
Max.
Unit
2N2221AUA, 2N2222AUA
4 PIN
Derate linearly 3.08 mW/°C above T
A
> +37.5°C
Derate linearly 4.76 mW/°C above T
A
> +63.5°C
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
3 PIN
T4-LDS-0042 Rev. 2 (080857)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
h
FE
30
50
35
75
40
100
40
100
20
30
0.3
1.0
120
300
150
325
V
(BR)CEO
50
Vdc
Symbol
Min.
Max.
Unit
I
CBO
10
10
µAdc
ηAdc
I
EBO
10
10
µAdc
ηAdc
I
CES
50
ηAdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
Base-Emitter Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
V
CE(sat)
Vdc
V
BE(sat)
0.6
1.2
2.0
Vdc
T4-LDS-0042 Rev. 2 (080857)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz
Symbol
h
fe
Min.
Max.
30
50
Unit
|h
fe
|
2.5
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
C
ibo
25
pF
C
obo
8.0
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
See figure 8 of MIL-PRF-19500/255
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
Symbol
t
on
Min.
Max.
35
Unit
ηs
t
off
300
ηs
T4-LDS-0042 Rev. 2 (080857)
Page 3 of 3
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