NTHD5904N
Power MOSFET
20 V, 4.5 A, Dual N−Channel, ChipFETt
Features
•
Low R
DS(on)
and Fast Switching Speed
•
Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
•
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
•
Pb−Free Packages are Available
Applications
V
(BR)DSS
20 V
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R
DS(on)
TYP
40 mW @ 4.5 V
I
D
MAX
4.5 A
55 mW @ 2.5 V
•
DC−DC Buck or Boost Converters
•
Low Side Switching
•
Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
T
A
=25°C
T
A
=85°C
T
A
=25°C
T
A
=25°C
T
A
=25°C
Steady
State
t
p
=10
ms
T
A
=85°C
T
A
=25°C
P
D
I
DM
T
J
,
T
STG
I
S
T
L
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
20
±8.0
3.3
2.4
4.5
1.13
2.5
1.8
0.64
10
−55 to
150
2.6
260
W
A
°C
A
°C
W
A
Unit
V
V
A
N−Channel MOSFET
D
1
, D
2
G
1
, G
2
S
1
, S
2
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
D
1
8
D
1
7
D
2
6
1 S
1
2 G
1
3 S
2
4 G
2
1
2
3
4
MARKING
DIAGRAM
8
7
6
5
(Top View)
D3 M
G
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t
≤
5 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
110
60
195
Unit
°C/W
D
2
5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: Human Body Model (HBM) Class 0.
D3 = Specific Device Code
M = Month Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 2
Publication Order Number:
NTHD5904N/D
NTHD5904N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
= 16 V, T
J
= 125°C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain−to−Source On−Resistance
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 4.5 V, I
D
= 3.3 A
V
GS
= 2.5 V, I
D
= 2.3 A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
= 2.6 A,
dI
S
/dt = 100 A/ms
V
GS
= 0 V, I
S
= 2.6 A
0.8
19.5
6.0
13
7.0
nC
1.15
V
ns
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 16 V,
I
D
= 3.3 A, R
G
= 2.5
W
6.0
17
17
5.1
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 3.3 A
V
GS
= 2.5 V, V
DS
= 16 V,
I
D
= 3.3 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16 V
465
65
30
4.0
0.4
0.8
2.0
6.0
0.5
0.8
1.7
nC
nC
pF
g
FS
V
DS
= 10 V, I
D
= 3.3 A
0.6
0.75
40
55
6.0
1.2
65
105
S
V
mW
I
GSS
V
DS
= 0 V, V
GS
=
"8.0
V
20
1.0
10
"100
nA
V
mA
Symbol
Test Conditions
Min
Typ
Max
Units
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTHD5904NT1
NTHD5904NT1G
NTHD5904NT3
NTHD5904NT3G
Package
ChipFET
ChipFET
(Pb−Free)
ChipFET
ChipFET
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTHD5904N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
11
10
I
D,
DRAIN CURRENT (AMPS)
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.2 V
1.4 V
1.6 V
5V
V
GS
= 4 V
V
GS
= 3 V
2.4 V
2V
T
J
= 25°C
1.8 V
I
D,
DRAIN CURRENT (AMPS)
11
10
9
8
7
6
5
4
3
2
1
0
0
25°C
T
J
= −55°C
1
1.5
2
2.5
0.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
125°C
V
DS
≥
10 V
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.06
Figure 2. Transfer Characteristics
I
D
= 3.3 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 2.5 V
0.05
0.04
V
GS
= 4.5 V
0.03
2
3
4
5
6
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 3.3 A
V
GS
= 2.5 V
1.4
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.2
1.0
100
T
J
= 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTHD5904N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1200
1000
C, CAPACITANCE (pF)
800
600
400
200
0
10
C
rss
5
V
GS
0
V
DS
5
10
15
20
C
oss
C
iss
5
Q
G
4
V
DS
V
GS
8
10
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
3
6
2
Q
GS
Q
GD
4
1
0
0
1
I
D
= 3.3 A
T
J
= 25°C
2
3
4
5
Q
G
, TOTAL GATE CHARGE (nC)
6
2
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 16 V
I
D
= 3.3 A
V
GS
= 4.5 V
t, TIME (ns)
t
d(off)
t
r
10
t
d(on)
6
5
4
3
2
1
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
t
f
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTHD5904N
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
D
8
7
6
5
q
L
5
6
3
7
2
8
1
H
E
1
2
3
4
E
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
DIM
A
b
c
D
E
e
e1
L
H
E
q
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
e1
e
b
c
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
A
0.05 (0.002)
0.017
0.079
SOLDERING FOOTPRINT*
2.032
0.08
0.457
0.018
0.635
0.025
0.635
0.025
1.092
0.043
2.032
0.08
0.178
0.007
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
mm
inches
0.66
0.026
0.254
0.010
SCALE 20:1
mm
inches
Basic
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Style 2
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5
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