NTHD4P02F
Power MOSFET and
Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
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MOSFET
V
(BR)DSS
−20 V
R
DS(on)
TYP
−130 mW @ −4.5 V
200 mW @ −2.5 V
I
D
MAX
−3.0 A
•
Leadless SMD Package Featuring a MOSFET and Schottky Diode
•
40% Smaller than TSOP−6 Package with Similar Thermal
Characteristics
•
Independent Pinout to each Device to Ease Circuit Design
•
Ultra Low V
F
Schottky
•
Pb−Free Package is Available
Applications
SCHOTTKY DIODE
V
R
MAX
20 V
S
V
F
TYP
0.510 V
A
I
F
MAX
3.0 A
•
•
•
•
Li−Ion Battery Charging
High Side DC−DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
G
V
V
A
A
A
W
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
Steady
State
t
v
5s
Pulsed Drain
Current
Power Dissipation
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
I
D
I
DM
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±12
−2.2
−1.6
−3.0
−9.0
1.1
0.6
2.1
I
S
T
J
, T
STG
T
L
−2.1
−55 to 150
260
A
°C
°C
Units
D
P−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET
CASE 1206A
STYLE 3
t
p
= 10
ms
Steady
State
t
v
5s
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
PIN CONNECTIONS
1
8
MARKING
DIAGRAM
1
2
3
4
C3 M
G
8
7
6
5
A
2
7
C
C
6
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
S
3
D
D
4
5
G
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t
v
5s
T
J
= 25°C
3.0
A
Symbol
V
RRM
V
R
I
F
Value
20
20
2.2
Units
V
V
A
C3 = Specific Device Code
M = Month Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
NTHD4P02FT1
NTHD4P02FT1G
Package
ChipFET
ChipFET
(Pb−free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4P02F/D
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 7
NTHD4P02F
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient (Note 1)
Steady State
t
v
5s
T
J
= 25°C
Symbol
R
qJA
Max
110
60
Units
°C/W
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain−to−Source On− Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= −4.5 V, V
DD
= −16 V,
I
D
= −2.2 A, R
G
= 2.5
W
7.0
13
33
27
12
25
50
40
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −2.2 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −10 V
185
95
30
3.0
0.2
0.5
0.9
300
150
50
6.0
nC
pF
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= −250
mA
V
GS
= −4.5, I
D
= −2.2 A
V
GS
= −2.5, I
D
= −1.7 A
V
DS
= −10 V, I
D
= −1.7 A
−0.6
−0.75
0.130
0.200
5.0
−1.2
0.155
0.240
S
V
W
V
(BR)DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= −250
mA
V
DS
= −16 V, V
GS
= 0 V, T
J
= 25°C
V
DS
= −16 V, V
GS
= 0 V, T
J
= 85°C
V
DS
= 0 V, V
GS
=
±12
V
−20
−23
−1.0
−5.0
±100
nA
V
mA
Symbol
Test Conditions
Min
Typ
Max
Units
DRAIN−SOURCE DIODE CHARACTERISTICS
(Note 2)
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
tRR
ta
tb
QRR
V
GS
= 0 V, I
S
= −2.1 A ,
dI
S
/dt = 100 A/ms
V
GS
= 0 V,
I
S
= −2.1 A
−0.85
32
10
22
15
nC
−1.15
V
ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Maximum Instantaneous Forward Voltage
Symbol
V
F
Test Conditions
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1.0 A
Maximum Instantaneous Reverse Current
Maximum Voltage Rate of Change
Non−Repetitive Peak Surge Current
I
R
dv/dt
I
FSM
V
R
= 10 V
V
R
= 20 V
V
R
= 20 V
Halfwave, Single Pulse, 60 Hz
10,000
23
Min
Typ
0.425
0.480
0.510
0.575
1.0
5.0
V/ns
A
mA
Max
Units
V
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
4
−I
D,
DRAIN CURRENT (AMPS)
V
GS
= −6 V to −3 V
V
GS
= −2.4 V
−2.2 V
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
−2 V
4
V
DS
≥
−10 V
3
3
−1.8 V
2
−1.6 V
1
−1.4 V
−1.2 V
0
0
1
2
3
4
5
6
7
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
T
C
= −55°C
25°C
0
0.5
100°C
3
1
1
1.5
2
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.5
I
D
= −2.1 A
T
J
= 25°C
0.25
Figure 2. Transfer Characteristics
T
J
= 25°C
0.225
V
GS
= −2.5 V
0.2
0.175
0.15
V
GS
= −4.5 V
0.125
0.1
0.5
1.5
2.5
3.5
−I
D,
DRAIN CURRENT (AMPS)
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= −2.1 A
V
GS
= −4.5 V
−I
DSS
, LEAKAGE (A)
1.4
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.2
1
100
T
J
= 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
−T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
600
V
DS
= 0 V
500
C, CAPACITANCE (pF)
400
300
200
100
0
10
5
−V
GS
0
−V
DS
5
10
15
20
C
OSS
C
RSS
C
ISS
V
GS
= 0 V
T
J
= 25°C
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
5
Q
T
4
−V
DS
−V
GS
12
15
3
Q
GS
2
Q
GD
9
6
1
I
D
= −2.1 A
T
J
= 25°C
0
1
2
3
4
3
0
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (AMPS)
V
DD
= −16 V
I
D
= −2.1 A
V
GS
= −4.5 V
100
t, TIME (ns)
t
d(OFF)
t
f
10
t
d(ON)
t
r
2.5
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
2
1.5
1
0.5
0
0.3
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
0.7
0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
0.1
Normalized to
qja
at 10s.
Chip
0.0175
W
0.0710
W
0.2706
W
0.5776
W
0.7086
W
Ambient
1.0E+03
0.01
1.0E−03
1.0E+01
1.0E+02
Figure 11. Thermal Response
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4
NTHD4P02F
TYPICAL SCHOTTKY PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1
T
J
= 150°C
1
T
J
= 150°C
T
J
= 25°C
T
J
= −55°C
0.40
0.60
0.80
T
J
= 25°C
0.40
0.60
0.80
0.1
0.20
0.1
0.20
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Typical Forward Voltage
1E−3
I
R,
REVERSE CURRENT (AMPS)
I
R,
MAXIMUM REVERSE CURRENT (AMPS)
1.0E+1
Figure 13. Maximum Forward Voltage
T
J
= 150°C
1.0E+0
1.0E−1
1.0E−2
1.0E−3
T
J
= 150°C
100E−6
T
J
= 100°C
10E−6
T
J
= 100°C
1E−6
1.0E−4
1.0E−5
T
J
= 25°C
0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
100E−9
10E−9
0
T
J
= 25°C
1.0E−6
1.0E−7
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
Figure 14. Typical Reverse Current
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 15. Maximum Reverse Current
I
O,
AVERAGE FORWARD CURRENT (AMPS)
3.5
freq = 20 kHz
3
2.5
2
1.5
1
0.5
0
25
dc
square wave
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
square wave
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
dc
45
65
85
105
125
145
165
T
L
, LEAD TEMPERATURE (°C)
Figure 16. Current Derating
Figure 17. Forward Power Dissipation
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