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BAV99WT1G

Description
0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size85KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BAV99WT1G Overview

0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV99WT1G Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SC70, EIAJ SC-70, 1.25MM WIDE
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionBAV99WT1G ON Semi BAV99WT1G, Dual SMT Switching Diode, Series, 70V 715mA, 6ns, 3-Pin SC-70
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.27 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAV99WT1G Small Signal Diode
April 2005
BAV99WT1G
Small Signal Diode
Connection Diagram
3
3
FA
1
2
1
SOT-323
2
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
70
200
1.0
2.0
-65 to +150
150
Unit
V
mA
A
A
°C
°C
T
STG
T
J
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
270
460
Unit
mW
°C/W
FR-4 board (3.0
×
4.5
×
0.062” by 1.0
×
0.5” land pads)
Electrical Characteristics
Symbol
V
R
V
F
T
C
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
I
R
= 100µA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Conditions
Min.
70
Max
715
855
1.0
1.25
2.5
50
70
2.0
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
I
R
Reverse Leakage
V
R
= 70V
V
R
= 25V, T
A
= 150°C
V
R
= 70V, T
A
= 150°C
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
C
T
t
rr
Total Capacitance
Reverse Recovery Time
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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