a
FEATURES
High Dynamic Range
Output IP3: +28 dBm: Re 50
@ 250 MHz
Low Noise Figure: 5.9 dB @ 250 MHz
Two Gain Versions:
AD8350-15: 15 dB
AD8350-20: 20 dB
–3 dB Bandwidth: 1.0 GHz
Single Supply Operation: 5 V to 10 V
Supply Current: 28 mA
Input/Output Impedance: 200
Single-Ended or Differential Input Drive
8-Lead SOIC Package and 8-Lead microSOIC Package
APPLICATIONS
Cellular Base Stations
Communications Receivers
RF/IF Gain Block
Differential A-to-D Driver
SAW Filter Interface
Single-Ended-to-Differential Conversion
High Performance Video
High Speed Data Transmission
PRODUCT DESCRIPTION
Low Distortion
1.0 GHz Differential Amplifier
AD8350
FUNCTIONAL BLOCK DIAGRAM
8-Lead SOIC and SOIC Packages (with Enable)
IN+ 1
ENBL
2
8
IN–
GND
GND
OUT–
+
–
7
6
5
V
CC
3
OUT+
4
AD8350
The AD8350 series are high performance fully-differential
amplifiers useful in RF and IF circuits up to 1000 MHz. The
amplifier has excellent noise figure of 5.9 dB at 250 MHz. It
offers a high output third order intercept (OIP3) of +28 dBm
at 250 MHz. Gain versions of 15 dB and 20 dB are offered.
The AD8350 is designed to meet the demanding performance
requirements of communications transceiver applications. It
enables a high dynamic range differential signal chain, with
exceptional linearity and increased common-mode rejection.
The device can be used as a general purpose gain block, an
A-to-D driver, and high speed data interface driver, among
other functions. The AD8350 input can also be used as a single-
ended-to-differential converter.
The amplifier can be operated down to 5 V with an OIP3 of
+28 dBm at 250 MHz and slightly reduced distortion perfor-
mance. The wide bandwidth, high dynamic range and temperature
stability make this product ideal for the various RF and IF
frequencies required in cellular, CATV, broadband, instrumen-
tation and other applications.
The AD8350 is offered in an 8-lead single SOIC package and
µSOIC
package. It operates from 5 V and 10 V power supplies,
drawing 28 mA typical. The AD8350 offers a power enable func-
tion for power-sensitive applications. The AD8350 is fabricated
using Analog Devices’ proprietary high speed complementary
bipolar process. The device is available in the industrial (–40°C to
+85°C) temperature range.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
AD8350–SPECIFICATIONS
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth
Bandwidth for 0.1 dB Flatness
Slew Rate
Settling Time
Gain (S21)
1
Gain Supply Sensitivity
Gain Temperature Sensitivity
Isolation (S12)
1
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic
Third Harmonic
Output Second Order Intercept
2
Output Third Order Intercept
2
250 MHz Signal
Second Harmonic
Third Harmonic
Output Second Order Intercept
2
Output Third Order Intercept
2
1 dB Compression Point (RTI)
2
Voltage Noise (RTI)
Noise Figure
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI)
Differential Offset Drift
Input Bias Current
Input Resistance
CMRR
Output Resistance
POWER SUPPLY
Operating Range
Quiescent Current
(@ 25 C, V
S
= 5 V, G = 15 dB, unless otherwise noted. All specifications refer to
differential inputs and differential outputs unless noted.)
Min
Typ
0.9
1.1
90
90
2000
10
15
0.003
–0.002
–18
Max
Unit
GHz
GHz
MHz
MHz
V/µs
ns
dB
dB/V
dB/°C
dB
Conditions
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
OUT
= 1 V p-p
0.1%, V
OUT
= 1 V p-p
V
S
= 5 V, f = 50 MHz
V
S
= 5 V to 10 V, f = 50 MHz
T
MIN
to T
MAX
f = 50 MHz
14
16
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
f = 150 MHz
f = 150 MHz
V
OUT+
– V
OUT–
T
MIN
to T
MAX
Real
f = 50 MHz
Real
4
25
3
27
3
–66
–67
–65
–70
58
58
28
29
–48
–49
–52
–61
39
40
24
28
2
5
1.7
6.8
±
1
0.02
15
200
–67
200
11.0
32
5.5
34
6.5
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBm
dBm
nV/√Hz
dB
mV
mV/°C
µA
Ω
dB
Ω
V
mA
mA
mA
mA
ns
dB
°C
Powered Up, V
S
= 5 V
Powered Down, V
S
= 5 V
Powered Up, V
S
= 10 V
Powered Down, V
S
= 10 V
f = 50 MHz, V
S
∆
= 1 V p-p
Power-Up/Down Switching
Power Supply Rejection Ratio
OPERATING TEMPERATURE RANGE
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50
Ω.
Specifications subject to change without notice.
28
3.8
30
4
15
–58
–40
+85
–2–
REV. A
AD8350
AD8350-20–SPECIFICATIONS
(@ 25 C, V = 5 V, G = 20 dB, unless otherwise noted. All specifications refer to
differential inputs and differential outputs unless noted.)
S
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth
Bandwidth for 0.1 dB Flatness
Slew Rate
Settling Time
Gain (S21)
1
Gain Supply Sensitivity
Gain Temperature Sensitivity
Isolation (S12)
1
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic
Third Harmonic
Output Second Order Intercept
2
Output Third Order Intercept
2
250 MHz Signal
Second Harmonic
Third Harmonic
Output Second Order Intercept
2
Output Third Order Intercept
2
1 dB Compression Point (RTI)
2
Voltage Noise (RTI)
Noise Figure
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI)
Differential Offset Drift
Input Bias Current
Input Resistance
CMRR
Output Resistance
POWER SUPPLY
Operating Range
Quiescent Current
Conditions
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
OUT
= 1 V p-p
0.1%, V
OUT
= 1 V p-p
V
S
= 5 V, f = 50 MHz
V
S
= 5 V to 10 V, f = 50 MHz
T
MIN
to T
MAX
f = 50 MHz
Min
Typ
0.7
0.9
90
90
2000
15
20
0.003
–0.002
–22
Max
Unit
GHz
GHz
MHz
MHz
V/µs
ns
dB
dB/V
dB/°C
dB
19
21
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V, V
OUT
= 1 V p-p
V
S
= 10 V, V
OUT
= 1 V p-p
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
V
S
= 5 V
V
S
= 10 V
f = 150 MHz
f = 150 MHz
V
OUT+
– V
OUT–
T
MIN
to T
MAX
Real
f = 50 MHz
Real
4
25
3
27
3
–65
–66
–66
–70
56
56
28
29
–45
–46
–55
–60
37
38
24
28
–2.6
1.8
1.7
5.6
±
1
0.02
15
200
–52
200
11.0
32
5.5
34
6.5
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBm
dBm
nV/√Hz
dB
mV
mV/°C
µA
Ω
dB
Ω
V
mA
mA
mA
mA
ns
dB
°C
Powered Up, V
S
= 5 V
Powered Down, V
S
= 5 V
Powered Up, V
S
= 10 V
Powered Down, V
S
= 10 V
f = 50 MHz, V
S
∆
= 1 V p-p
Power-Up/Down Switching
Power Supply Rejection Ratio
OPERATING TEMPERATURE RANGE
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50
Ω.
28
3.8
30
4
15
–45
–40
+85
REV. A
–3–
AD8350
ABSOLUTE MAXIMUM RATINGS*
PIN FUNCTION DESCRIPTIONS
Supply Voltage, V
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 V
Input Power Differential . . . . . . . . . . . . . . . . . . . . . . +8 dBm
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 400 mW
θ
JA
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
θ
JA
µSOIC
(RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133°C/W
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
*Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Pin
1, 8
Function
IN+, IN–
Description
Differential Inputs. IN+ and IN–
should be ac-coupled (pins have a dc
bias of midsupply). Differential input
impedance is 200
Ω.
Power-up Pin. A high level (5 V) enables
the device; a low level (0 V) puts device
in sleep mode.
Positive Supply Voltage. 5 V to 10 V.
Differential Outputs. OUT+ and
OUT– should be ac-coupled (pins have
a dc bias of midsupply). Differential
input impedance is 200
Ω.
Common External Ground Reference.
2
ENBL
3
4, 5
V
CC
OUT+, OUT–
PIN CONFIGURATION
IN+
1
ENBL
2
8
6, 7
GND
IN–
7
GND
TOP VIEW
V
CC 3
(Not to Scale)
6
GND
5
AD8350
OUT+
4
OUT–
ORDERING GUIDE
Model
AD8350AR15
AD8350AR15-REEL
AD8350AR15-REEL7
AD8350ARM15
AD8350ARM15-REEL
AD8350ARM15-REEL7
AD8350AR20
AD8350AR20-REEL
AD8350AR20-REEL7
AD8350ARM20
AD8350ARM20-REEL
AD8350ARM20-REEL7
AD8350-EVAL
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Description
8-Lead SOIC
8-Lead SOIC 13" Reel
8-Lead SOIC 7" Reel
8-Lead microSOIC
8-Lead microSOIC 13" Reel
8-Lead microSOIC 7" Reel
8-Lead SOIC
8-Lead SOIC 13" Reel
8-Lead SOIC 7" Reel
8-Lead microSOIC
8-Lead microSOIC 13" Reel
8-Lead microSOIC 7" Reel
SOIC Evaluation Board
Package Option
SO-8
SO-8
SO-8
RM-8
RM-8
RM-8
SO-8
SO-8
SO-8
RM-8
RM-8
RM-8
Brand Code
Standard
Standard
Standard
J2N
J2N
J2N
Standard
Standard
Standard
J2P
J2P
J2P
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. A
Typical Performance Characteristics–AD8350
50
20
25
V
CC
= 10V
SUPPLY CURRENT – mA
40
V
CC
= 10V
15
GAIN – dB
V
CC
= 10V
GAIN – dB
20
V
CC
= 5V
15
30
V
CC
= 5V
20
10
5
10
10
V
CC
= 5V
0
–40
–20
0
20
40
TEMPERATURE – C
0
60
80
1
10
100
1k
FREQUENCY – MHz
10k
5
1
10
100
1k
FREQUENCY – MHz
10k
TPC 1. Supply Current vs.
Temperature
TPC 2. AD8350-15 Gain (S21) vs.
Frequency
TPC 3. AD8350-20 Gain (S21) vs.
Frequency
350
350
500
300
300
400
SOIC
IMPEDANCE –
IMPEDANCE –
IMPEDANCE –
250
V
CC
= 10V
250
V
CC
= 10V
300
SOIC
200
V
CC
= 5V
150
200
200
150
V
CC
= 5V
100
100
1
10
100
FREQUENCY – MHz
1k
100
1
10
100
FREQUENCY – MHz
1k
0
0
10
100
FREQUENCY – MHz
1000
TPC 4. AD8350-15 Input Imped-
ance vs. Frequency
TPC 5. AD8350-20 Input Impedance
vs. Frequency
TPC 6. AD8350-15 Output Impedance
vs. Frequency
800
SOIC
600
–5
–10
–10
–15
ISOLATION – dB
IMPEDANCE –
ISOLATION – dB
V
CC
= 10V
–20
400
SOIC
–15
V
CC
= 10V
200
–20
V
CC
= 5V
–25
V
CC
= 5V
0
0
100
10
FREQUENCY – MHz
1000
–25
1
10
100
1k
FREQUENCY – MHz
10k
–30
1
10
100
1k
FREQUENCY – MHz
10k
TPC 7. AD8350-20 Output Imped-
ance vs. Frequency
TPC 8. AD8350-15 Isolation (S12)
vs. Frequency
TPC 9. AD8350-20 Isolation (S12)
vs. Frequency
REV. A
–5–
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