STTH8L06
Turbo 2 ultrafast high voltage rectifier
Features
■
■
■
■
■
K
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching and conduction losses
Package insulation voltage:
– TO-220AC Ins: 2500 V rms
– TO-220FPAC: 2000 V DC
K
A
A
K
TO-220AC
STTH8L06D
K
TO-220FPAC
STTH8L06FP
Description
The STTH8L06, which is using ST Turbo2 600 V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
A
NC
K
A
D
2
PAK
STTH8L06G
TO-220AC Insulated
STTH8L06DIRG
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
I
R
(max)
T
j
V
F
(typ)
t
rr
(typ)
Value
8A
600 V
200 µA
175 °C
0.85 V
75 ns
February 2012
Doc ID 8373 Rev 6
1/11
www.st.com
11
Characteristics
STTH8L06
1
Table 2.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
TO-220AC / TO-220FPAC / D
2
PAK
TO-220AC Ins.
TO-220AC / D
2
PAK
I
F(AV)
I
FSM
T
stg
T
j
Average forward current
δ
= 0.5
TO-220FPAC
TO-220AC Ins.
T
c
= 150 °C
T
c
= 125 °C
T
c
= 135 °C
t
p
= 10 ms sinusoidal
120
-65 to 175
-40 to 175
A
°C
°C
8
A
Value
600
30
24
Unit
V
A
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Table 3.
Symbol
Thermal resistance
Parameter
TO-220AC / D
2
PAK
Value (max)
2.5
5
4
°C/W
Unit
R
th(j-c)
Junction to case
TO-220FPAC
TO-220AC Ins.
Table 4.
Symbol
I
R
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
Forward voltage drop
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
Typ.
Max.
8
µA
16
200
1.3
I
F
= 8 A
V
0.85
1.05
Unit
V
F
To evaluate the conduction losses use the following equation: P = 0.89 x I
F(AV)
+ 0.022 I
F
2
(RMS)
Table 5.
Symbol
t
rr
I
RM
t
fr
V
FP
Dynamic characteristics
Parameter
Reverse
recovery time
T
j
= 25 °C
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs V
R
= 30 V
I
F
= 8 A, dI
F
/dt = 100 A/µs,
V
R
= 400 V
I
F
= 8 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
I
F
= 8 A, dI
F
/dt = 100 A/µs
Min.
Typ.
75
7.2
Max.
105
10
150
6
Unit
ns
A
ns
V
Reverse
T = 125 °C
recovery current
j
Forward
recovery time
Forward
recovery voltage
T
j
= 25°C
2/11
Doc ID 8373 Rev 6
STTH8L06
Characteristics
Figure 1.
P(W)
11
10
9
Conduction losses versus
average current
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Figure 2.
I
FM
(A)
100.0
Forward voltage drop versus
forward current
T
j
=150°C
(maximum values)
δ
=1
8
7
6
5
4
3
2
1
0
0
2
4
6
1.0
10.0
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
T
I
F(AV)
(A)
δ
=tp/T
8
tp
0.1
10
0.0
0.5
1.0
V
FM
(V)
1.5
2.0
2.5
3.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration (TO-220FPAC)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
Z
th(j-c)
/R
th(j-c)
(TO-220AC, TO-220AC Ins, D
2
PAK)
T
Single pulse
0.2
0.1
T
t
p
(s)
δ
=tp/T
1.E+00
tp
0.0
1.E+01
t
p
(s)
1.E-02
1.E-01
δ
=tp/T
tp
1.E+00
1.E-03
Figure 5.
I
RM
(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
20
V
R
=400V
T
j
=125°C
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 6.
t
rr
(ns)
1000
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
900
800
I
F
=I
F(AV)
700
I
F
=0.5 x I
F(AV)
600
I
F
=0.25 x I
F(AV)
500
400
300
200
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
40
60
80
100
120
140
160
180
200
100
0
0
20
40
60
dI
F
/dt(A/µs)
80
100
120
140
160
180
200
Doc ID 8373 Rev 6
3/11
Characteristics
STTH8L06
Figure 7.
Q
rr
(nC)
1000
900
800
700
600
500
400
300
200
100
0
0
20
V
R
=400V
T
j
=125°C
Reverse recovery charges
versus dI
F
/dt (typical values)
Figure 8.
S factor
2.0
Softness factor versus
dI
F
/dt (typical values)
I
F
≤
2 x I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
1.8
1.6
I
F
=I
F(AV)
1.4
1.2
I
F
=0.5 x I
F(AV)
1.0
0.8
0.6
0.4
dI
F
/dt(A/µs)
40
60
80
100
120
140
160
180
200
0.2
0.0
0
25
50
75
dI
F
/dt(A/µs)
100
125
150
175
200
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
S factor
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values)
V
FP
(V)
7
I
F
=I
F(AV)
T
j
=125°C
1.25
1.00
I
RM
6
5
4
3
I
F
≤
2 x I
F(AV)
V
R
=400V
Reference: T
j
=125°C
0.75
Q
RR
0.50
0.25
2
1
T
j
(°C)
0.00
25
50
75
100
125
dI
F
/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
Figure 11. Forward recovery time versus
dI
F
/dt (typical values)
t
fr
(ns)
300
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
250
200
100
150
100
10
50
dI
F
/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
1
1
10
V
R
(V)
100
1000
4/11
Doc ID 8373 Rev 6
STTH8L06
Characteristics
Figure 13. Thermal resistance junction to ambient versus copper surface under tab (D
2
PAK)
R
th(j-a)
(°C/W)
70
epoxy FR4, Cu = 35 µm
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
Doc ID 8373 Rev 6
5/11
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