Bulletin I2233 rev. A 11/05
SAFE
IR
Series
40TTS12PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
Description/ Features
The 40TTS12PbF
SAFE
IR
series of silicon con-
trolled rectifiers are specifically designed for me-
dium power switching and phase control applica-
tions. The glass passivation technology used has
reliable operation up to 140°C junction tempera-
ture.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
V
T
I
TSM
< 1.6V @ 80A
= 350A
V
RRM
= 1200V
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
Package Outline
Units
A
Values
25
40
1200
350
T
J
= 25°C
1.6
500
150
- 40 to 140
A
V
A
V
V/µs
A/µs
°C
TO-220
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1
40TTS12PbF
SAFE
IR
Series
Bulletin I2233 rev. A 11/05
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
40TTS12PbF
1200
V
DRM
, maximum
peak direct voltage
V
1200
T
J
°C
-25 to 140
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
I
TSM
I
2
t
Max. RMS On-state Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
40TTS..
25
40
300
350
450
630
Units
A
Conditions
@ T
C
= 93° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 140 °C
mA
mA
V/µs
A/µs
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 80A, T
J
= 25°C
T
J
= 140°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
6300
1.6
11.4
0.96
0.5
10
100
200
500
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Holding Current
Max. Latching Current
Anode Supply = 6V, Resistive load, Initial I
T
= 1A
Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage
di/dt
Max. Rate of Rise of turned-on Current
2
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40TTS12PbF
SAFE
IR
Series
Bulletin I2233 rev. A 11/05
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
V
GT
Max. required DC Gate Voltage
to trigger
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.2
1.5
mA
T
J
= 140°C, V
DRM
= rated value
T
J
= 140°C, V
DRM
= rated value
1.3
V
Anode supply = 6V, resistive load, T
J
= 25°C
40TTS..
8.0
2.0
1.5
10
35
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= 25°C
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
40TTS..
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 140°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
0.5
2 (0.07)
6 (5)
12 (10)
g (oz.)
Kg-cm
(Ibf-in)
Mounting surface, smooth and greased
60
40TTS..
- 40 to 140
- 40 to 140
0.8
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
°C/W
DC operation
TO-220AC
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40TTS12PbF
SAFE
IR
Series
Bulletin I2233 rev. A 11/05
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
140
RthJC (DC) = 0.8 ˚C/W
140
RthJC (DC) = 0.8 ˚C/W
130
120
110
100
90
80
70
0
5
10
15
20
25
30
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Conduction Angle
130
120
Conduction Period
110
100
90
80
70
0
5
30˚
60˚
90˚
120˚
180˚
DC
30˚
60˚
90˚
120˚
180˚
10 15 20 25 30 35 40 45
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
70
60
50
40
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Angle
DC
180˚
120˚
90˚
60˚
30˚
30
RMS Limit
20
10
Tj = 125˚C
Conduction Period
Tj = 125˚C
0
0
10
20
30
40
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
280
260
240
220
200
180
160
140
120
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
300
Rated Vrrm Reapplied
250
200
150
100
0.01
10
100
0.1
1
10
Number of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
4
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40TTS12PbF
SAFE
IR
Series
Bulletin I2233 rev. A 11/05
1000
Instantaneous On-state Current (A)
Tj = 25˚C
Tj = 125˚C
100
10
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
T = -10 ˚C
J
1
VGD
T = 25 ˚C
J
T = 140 ˚C
J
(4)
(3)
(2)
(1)
IGD
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
10
100
Transient Thermal Impedance Z
thJC
(°C/W)
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
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