Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier
■
Features
•
Compatible between high breakdown voltage and high cut-off frequency
•
Low noise, high-gain amplification
•
Two elements incorporated into one package (Each transistor is separated)
•
Reduction of the mounting area and assembly cost by one half
0.12
+0.03
-0.02
6
5
4
Unit: mm
0.80
±0.05
1.00
±0.04
0 to 0.02
•
MSG33004
+
MSG33001
(0.35) (0.35)
1.00
±0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Overall
Total power dissipation
*
Junction temperature
Storage temperature
I
C
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
100
9
6
1
30
125
125
−55
to
+125
mA
V
V
V
Symbol
V
CBO
V
CEO
V
EBO
Rating
9
6
1
Unit
V
V
V
Display at No.1 lead
0.10
■
Basic Part Number
1
2
3
0.10
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
0.37
+0.03
-0.02
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 6D
Internal Connection
6
Tr1
5
4
Tr2
mA
mW
°C
°C
1
2
3
Note) *: Copper plate at the collector is 5.0 cm
2
on substrate at 10 mm
×
12 mm
×
0.8 mm.
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
*
Forward transfer gain
*
Noise figure
*
Collector output capacitance
(Common base, input open circuited)
*
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
S
21e
2
NF
C
ob
Conditions
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
15 mA
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
15 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
6.0
100
17
9.0
1.4
0.6
2.0
0.9
Min
Typ
Max
1
1
1
220
Unit
µA
µA
µA
GHz
dB
dB
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Publication date: November 2004
SJC00319BED
(0.10)
1
MSG36E41
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
•
Tr2
Parameter
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
*
Forward transfer gain
*
Noise figure
*
Collector output capacitance
(Common base, input open circuited)
*
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
S
21e
2
NF
C
ob
Conditions
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
9.0
100
19
11.0
1.4
0.3
2.0
0.6
Min
Typ
Max
1
1
1
220
Unit
µA
µA
µA
GHz
dB
dB
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Common characteristics chart
P
C
T
a
120
Collector power dissipation P
C
(mW)
100
80
60
40
20
0
0
40
80
120
Ambient temperature T
a
(
°C
)
2
SJC00319BED
MSG36E41
Characteristics charts of Tr1
I
C
V
CE
14
I
B
=
10
µA
step
80
µA
70
µA
60
µA
8
50
µA
6
4
2
0
40
µA
30
µA
20
µA
10
µA
0
1
2
3
4
5
6
12
180
V
CE
=
3 V
160
h
FE
I
C
25
V
CE
=
3 V
f
=
2 GHz
f
T
I
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
140
120
100
80
60
40
20
0
10
Transition frequency f
T
(GHz)
0
0
1
10
100
20
15
10
5
0
1
10
100
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
1
f
=
1 MHz
T
a
=
25°C
15
G
P
I
C
V
CE
=
3 V
f
=
2 GHz
14
12
S
21e
2
I
C
V
CE
=
3 V
f
=
2 GHz
10
Forward transfer gain
S
21e
(dB)
2
Power gain G
P
(dB)
10
8
6
5
0
4
2
0
−5
0.1
0
2
4
6
8
10
12
−10
0.1
1
10
100
1
10
100
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
NF
I
C
7
6
V
CE
=
3 V
f
=
2 GHz
S
11
, S
22
1.0
0.5
2.0
V
CE
=
3 V
I
C
=
30 mA
Noise figure NF (dB)
5
4
S
11
0
0.3
S
22
1.0
3.0
3
∞
2
1
−
0.5
0
0.1
1
10
100
−2.0
−1.0
Collector current I
C
(mA)
SJC00319BED
3
MSG36E41
S
21e
2
,
S
12e
2
f
50
40
Forward transfer gain
S
21e
,
2
Reverse transfer gain
S
12e
(dB)
30
20
10
0
S
21e
2
2
−10
−20
−30
−40
−50
0
0.5
1.0
1.5
2.0
2.5
3.0
S
12e
2
Frequency f (GHz)
4
SJC00319BED
MSG36E41
Characteristics charts of Tr2
I
C
V
CE
14
12
I
B
=
10
µA
step
180
V
CE
=
3 V
80
µA
70
µA
10
8
60
µA
50
µA
40
µA
30
µA
4
2
0
20
µA
10
µA
160
h
FE
I
C
25
V
CE
=
3 V
f
=
2 GHz
f
T
I
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
140
120
100
80
60
40
20
0
0.01
Transition frequency f
T
(GHz)
0.1
1
10
100
20
15
6
10
5
0
1
2
3
4
5
6
0
1
10
100
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
0.8
0.7
10
0.6
0.5
0.4
0.3
0.2
0.1
−10
0.1
f
=
1 MHz
15
G
P
I
C
V
CE
=
3 V
f
=
2 GHz
14
12
S
21e
2
I
C
V
CE
=
3 V
f
=
2 GHz
Forward transfer gain
S
21e
(dB)
2
Power gain G
P
(dB)
10
8
6
5
0
4
2
0
−5
0
1
2
3
4
5
6
1
10
100
1
10
100
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
NF
I
C
7
6
V
CE
=
3 V
f
=
2 GHz
S
11
, S
22
1.0
0.5
2.0
V
CE
=
3 V
I
C
=
10 mA
Noise figure NF (dB)
5
4
0
3
0.3
S
11
1.0
3.0
∞
2
S
22
1
−
0.5
0
0.1
1
10
100
−2.0
−1.0
Collector current I
C
(mA)
SJC00319BED
5
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