DSI30-12AS
Standard Rectifier
V
RRM
I
FAV
V
F
=
=
=
1200 V
30 A
1.25 V
Single Diode
Part number
DSI30-12AS
Marking on Product: DSI30-12AS
Backside: cathode
1
3
2/4
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-263 (D2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSI30-12AS
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.82
14.1
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
10
160
300
325
255
275
450
440
325
315
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
40
1.5
1.29
1.60
1.25
1.66
30
V
µA
mA
V
V
V
V
A
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 130 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.9 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSI30-12AS
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
1)
TO-263 (D2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-40
-40
-40
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
2
mounting force with clip
20
60
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Part No.
Logo
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Ordering
Standard
Alternative
Ordering Number
DSI30-12AS-TRL
DSI30-12AS-TUB
Marking on Product
DSI30-12AS
DSI30-12AS
Delivery Mode
Tape & Reel
Tube
Quantity
800
50
Code No.
507511
470988
Similar Part
DSI30-12A
DSI30-12AC
DSI30-16AS
DSI30-16A
DSI30-08AS
DSI30-08A
DSI30-08AC
Package
TO-220AC (2)
ISOPLUS220AC (2)
TO-263AB (D2Pak) (2)
TO-220AC (2)
TO-263AB (D2Pak) (2)
TO-220AC (2)
ISOPLUS220AC (2)
Voltage class
1200
1200
1600
1600
800
800
800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.82
11
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSI30-12AS
Outlines TO-263 (D2Pak)
Dim.
W
A
c2
Supplier
Option
E
D
A1
H
4
1 2 3
c
2x e
10.92
(0.430)
3x b2
mm (Inches)
2x b
E1
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
9.02
(0.355)
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
L1
L2
L
D1
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
1
3
2/4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSI30-12AS
Rectifier
60
50
40
200
250
50 Hz, 80% V
RRM
500
V
R
= 0 V
400
I
F
30
I
FSM
[A]
20
T
VJ
= 125°C
150°C
T
VJ
= 45°C
300
It
200
150
T
VJ
= 150°C
2
T
VJ
= 45°C
[A]
[A s]
100
2
T
VJ
= 150°C
10
T
VJ
= 25°C
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
100
0.001
0
0.01
0.1
1
1
2
3
4 5 6 7 8 9
1 0
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
50
t [s]
Fig. 2 Surge overload current
2
t [ms]
Fig. 3 I t versus time per diode
40
P
tot
30
[W]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
40
30
I
F(AV)M
20
[A]
10
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
0
50
100
150
200
0
0
50
100
150
200
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
1.0
0.8
0.6
Constants for Z
thJC
calculation:
i R
thi
(K/W)
1 0.03
2 0.08
3 0.2
4 0.39
5 0.2
1
10
100
1000
10000
Z
thJC
0.4
t
i
(s)
0.0004
0.002
0.003
0.03
0.29
[K/W]
0.2
0.0
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
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