2SC5470
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output
ADE-208-672 (Z)
1st. Edition
Oct. 1, 1998
Features
•
High breakdown voltage
V
CBO
= 1500 V
•
High speed switching
tf = 0.15
µsec(typ.)
at fH=64kHz
Outline
TO–3PFM
1
2
3
1. Base
2. Collector
3. Emitter
2SC5470
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
c(peak)
P
C Note1
Tj
Tstg
Ratings
1500
700
6
20
40
150
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Symbol
V
(BR)CEO
Min
700
6
—
10
3.5
—
—
—
—
Typ
—
—
—
—
—
—
—
0.2
0.15
Max
—
—
500
40
6.5
5
1.5
0.4
—
V
V
µs
µs
Unit
V
V
µA
Test Conditions
I
C
= 10mA, R
BE
= •
I
E
= 10mA, I
C
= 0
V
CE
= 1500V, R
BE
= 0
V
CE
= 5 V, I
C
= 1A
V
CE
= 5 V, I
C
= 10A
I
C
= 12A, I
B
= 4A
I
C
= 12A, I
B
= 4A
I
CP
= 8A, I
B1
= 3A
f
H
= 31.5kHz
I
CP
= 8A, I
B1
= 2A
f
H
= 64kHz
Emitter to base breakdown voltage V
(BR)EBO
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation
voltage
I
CES
h
FE1
h
FE2
V
CE(sat)
Base to emitter saturation voltage V
BE(sat)
Fall time
Fall time
t
f
t
f
2
2SC5470
Main Characteristics
Collector Power Dissipation
vs. Temperature
Pc (W)
200
I
C
(A)
50
20
10
5
2
1
0.5
0.2
0
50
100
Case Temperature
150
Tc (°C)
200
Area of Safe Operaion
Collector Power Dissipation
150
100
50
Collector Current
0.1
100
5000
1000
10
Collector to Emitter Voltage V
CE
(V)
L = 180 µH
I
B2
= –1 A
duty < 1 %
Tc = 25°C
Typical Output Characteristics
10
I
C
(A)
2.0 A
A
1.8
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
DC Current Transfer Ratio vs.
Collector Current
100
h
FE
50
20
10
5
2
V
CE
= 5 V
1
2
5 10
0.1 0.2
0.5 1
Collector Current I
C
(A)
Tc = –25 °C
25 °C
75 °C
5
0.6 A
0.4 A
0.2 A
Tc = 25 °C
0
5
I
B
=0
10
DC Current Transfer Ratio
Collector Current
20
Collector to Emitter Voltage V
CE
(V)
3
2SC5470
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
Base to Emitter Saturation Voltage
V
BE(sat)
(V)
I
C
/ I
B
= 3
5
2
1
25 °C
75 °C
10
I
C
/ I
B
= 3
5
2
Tc = –25°C
1
0.5
0.2
25 °C
75 °C
Base to Emitter Saturation Voltage
vs. Collector Current
0.5
0.2
0.1
Tc = –25 °C
2
5 10
0.5 1
Collector Current I
C
(A)
20
0.05
0.1 0.2
0.1
2
5 10
0.2
0.5 1
Collector Current I
C
(A)
20
Collector to Emitter Saturation Voltage
vs. Base Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
I
C
= 6 A
8A
5
Fall Time t
f
(µs)
0.6
0.8
Fall Time vs. Base Current
I
CP
= 8 A
f
H
= 64 kHz
Tc = 25°C
0.4
10 A
0.2
Tc = 25°C
0
0.1 0.2
0.5
1
Base Current
2
5
I
B
(A)
10
0
0.6
1.0
1.4
1.8
2.2
2.6
3.0
Base Current I
B1
(A)
4
2SC5470
Storage Time vs. Base Current
8
I
CP
= 8 A
f
H
= 64 kHz
Tc = 25°C
Storage Time tstg (µs)
6
4
2
0
0.6
1.0
1.4
1.8 2.2
2.6
Base Current I
B1
(A)
3.0
5
京公网安备 11010802033920号
EEWORLD
