STD03N and STD03P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪
Built-in temperature compensation diodes
▪
High power (160 W) handling in a small package
(TO-3P), for minimized heat sink requirements
▪
Built-in drivers and temperature compensation diodes,
reducing external component count and simplifying
circuit design
▪
NPN and PNP versions
▪
Emitter terminals placed symmetrically, pin 5 on NPN
and pin 1 on PNP models, allowing adjacent placement on
PCB to minimize trace length and output skew when used
in pairs
▪
Approved by major manufacturers
Description
The STD03N and STD03P are enhanced Darlington transistors
with built-in drivers and temperature compensation diode.
Manufactured using the unique Sanken thin-wafer production
technology, these devices achieve higher power levels through
decreased thermal resistance, and can withstand higher voltages
than similar devices on the market.
The temperature compensation diode is integrated on the same
chip as the power transistors. By this design, the STD03N and
STD03P eliminate delays that would otherwise be induced
between thermal sensing at the heat source, and the operation of
the compensation circuitry. Thus, these transistors are ideal for
applications where enhanced thermal stability is required.
This device is provided in a 5-pin TO-3P plastic package with
pin 4 removed. Contact Allegro
®
for application support and
additional information on device performance.
Applications include:
▪
General amplifier applications
▪
Public address amplifiers
▪
Car audio amplifiers
Package: 5 pin TO-3P (MT-100)
STD03N
STD03P
1 2 3 4
5
1 2 3 4
5
Not to scale
Emitter pins symmetrical
Equivalent Circuits
3
4
1
STD03N
1
STD03P
5
2
5
3
Datasheet 28104.00a
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
SELECTION GUIDE
Part Number
STD03N*
Type
NPN
h
FE
Rating
Range O: 5000 to 12000
Range Y: 8000 to 20000
Range O: 5000 to 12000
Range Y: 8000 to 20000
Bulk, 100 pieces
Packing
STD03P*
PNP
*Specify h
FE
range when ordering. If no h
FE
range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ABSOLUTE MAXIMUM RATINGS at T
A
= 25°C
Characteristic
Collector-Base Voltage
1
Collector-Emitter Voltage
1
Emitter-Base Voltage
1
Collector Current
1
Base Current
1
Collector Power Dissipation
2
Diode Forward Current
Junction Temperature
Storage Temperature
1
For
2
T
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
I
F
T
J
T
stg
Rating
160
160
5
15
1
160
10
150
–55 to150
Unit
V
V
V
A
A
W
mA
°C
°C
PNP type (STD03P), voltage and current values are negative.
= 25°C.
ELECTRICAL CHARACTERISTICS at T
A
= 25°C
Characteristic
Collector-Cutoff Current
1
Emitter Cutoff Current
1
Collector-Emitter Voltage
1
DC Current Transfer Ratio
2,3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
V
CB
= 160 V
V
EB
= 5 V
I
C
= 30 mA
V
CE
= 4 V, I
C
= 10 A
I
C
= 10 A, I
B
= 10 mA
I
C
= 10 A, I
B
= 10 mA
STD03N
STD03P
STD03N
STD03P
V
CE
= 20 V, I
C
= 40 mA
V
CE
= –20 V, I
C
= –40 mA
I
F
= 2.5 mA
I
F
= 2.5 mA
Test Conditions
Min.
–
–
160
5000
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
1190
1200
705
1540
Max.
100
100
–
20000
–2.0
–2.5
–
–
–
–
Unit
μA
μA
V
–
V
V
mV
mV
mV
mV
Diode Forward Voltage
1
For
2
h
V
F
PNP type (STD03P), voltage and current values are negative.
rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y).
FE
3
When the transistor is used in pairs, the following conditions must be satisfied: Total V
≤
Total V
F
BE
of the transistors (the above measurement
conditions shall be applied), and
ΔV
= 0 to 500 mV.
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25°C, unless otherwise stated.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
2
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
STD03N Performance Characteristics at T
A
= 25°C
50 mA
5.0mA
15
2.
0m
A
A
1.5 m
3
1.2 mA
0.8 mA
V
CE(sat)
(V)
10
2
15 A
10 A
I
C
= 5 A
I
C
vs. V
CE
I
C
(A)
V
CE(sat)
vs. I
B
0.5 mA
5
1
I
B
= 0.3 mA
0
0
2
V
CE
(V)
4
6
0
0.0001
100000
0.001
0.01
I
B
(A)
0.1
1
15
I
C
(A)
I
C
vs. V
BE
V
CE
= 4 V Continuous
h
FE
vs. I
C
V
CE
= 4 V Continuous
1000
5
C
25°
C
h
FE
10
10000
C
125°
25°C
C
–30°
0
12
5°C
–30°
100
0
0.5
1.0
1.5
V
BE
(V)
2.0
2.5
10
0.01
0.1
1
I
C
(A)
10
100
10
100.0
ms
ms
10 100
DC
I
F
(mA)
I
F
vs. V
F
For Diode
Single pulse
No heatsink
Natural cooling
1
I
C
(A)
1.0
0.1
1
Safe Operating
Area
10.0
0
0.5
1.0
V
F
(V)
1.5
2.0
160
140
10
V
CE
(V)
100
1000
10.00
(°C/W)
1.00
120
100
P
C
(W)
ith
W
R
vs. t
R
P
C
vs. T
A
0.10
80
60
40
20
ts
ea
H
k
in
0.01
3.5
1
10
t (ms)
100
1000
0
Without Heatsink
0
25
50
75
100
T
A
(°C)
125
150
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
3
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
STD03P Performance Characteristics at T
A
= 25°C
50 mA
15
mA
5.0
2.0
m
A
3
1.5 m
A
1.2 mA
0.8 mA
–
V
CE(sat)
(V)
10
2
I
C
vs. V
CE
–I
C
(A)
15 A
10 A
–I
C
= 5 A
V
CE(sat)
vs. I
B
0.5 mA
5
–I
B
= 0.3 mA
1
0
0
2
–V
CE
(V)
4
6
0
0.0001
100000
0.001
–
I
B
(A)
0.01
0.1
1
15
10
–I
C
(A)
10000
h
FE
C
125°
25°C
C
–30°
I
C
vs. V
BE
–V
CE
= 4 V Continuous
h
FE
vs. I
C
1000
–V
CE
= 4 V Continuous
C
25°
C
5
–30°
100
0
12
5°C
0
0.5
1.0
1.5
–
V
BE
(V)
2.0
2.5
10
0.01
0.1
1
–I
C
(A)
10
100
10
100.0
ms ms
10 100
DC
I
F
(mA)
I
F
vs. V
F
For Diode
Single pulse
No heatsink
Natural cooling
1
–I
C
(A)
1.0
0.1
1
Safe Operating
Area
10.0
0
0.5
1.0
V
F
(V)
1.5
2.0
160
140
10
–V
CE
(V)
100
1000
10.00
(°C/W)
1.00
120
100
P
C
(W)
ith
W
R
vs. t
P
C
vs. T
A
0.10
JA
80
60
40
20
ts
ea
H
k
in
R
0.01
3.5
1
10
t (ms)
100
1000
0
Without Heatsink
0
25
50
75
100
T
A
(°C)
125
150
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
4
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
PACKAGE OUTLINE DRAWING, TO-3P
STD03N
Terminal
Configuration
STD03P
Terminal
Configuration
15.6 ±0.3
Gate Burr
4.8 ±0.2
2
+0.2
–0.1
2 ±0.2
Branding
XXXXXXXX
XXXXXXXX
3 MAX
14.9 ±0.2
19.9 ±0.3
1.7 ±0.1
Terminal dimension
at case surface
+0.2
1.74
–0.1
1.34
–0.1
+0.2
(35.4)
1.05
–0.1
+0.2
20.5
–0.5
+1
4×P2.54 ±0.1 = (10.16)
Terminal dimensions at case surface
4×P2.54 ±0.6 = 10.16 ±0.8
Terminal dimension at lead tips
15.8 ±0.2
0.65
–0.1
+0.2
1
2
3
4
5
1
2
3
4
5
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Terminal treatment: Ni plating and solder dip
Heat sink material: Cu
Heat sink treatment: Ni plating
Leadform: 2804
Weight (approximate): 6.0 g
Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion):
1st line, type: STD03X
Where: X is the transistor type (N or
P)
2nd line, lot:
YMDD H
Where: Y is the last digit of the year of manufacture
M is the month (1 to
9, O, N, D)
DD is the 2-digit date
H is the h
FE
rating (O or
Y;
for values see
footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
3.2
–0.2
+0.1
5
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