BC80725-5BZ datasheet, PDF - EEWORLD Datasheet

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BC80725-5BZ: Description800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size35KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BC80725-5BZ Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC80725-5BZ Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.8000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	SOT-23, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.3100 W
Transistor type	Universal small signal
Minimum DC amplification factor	60
Rated crossover frequency	100 MHz

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 – MARCH 2001

PARTMARKING DETAILS

BC80716 –

5AZ

BC80725 –

5BZ

BC80740 –

5CZ

BC807

COMPLEMENTARY TYPE

BC817

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

-50

-45

-5

-1

-500

-100

-200

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector Cut-Off

Current

SYMBOL

CBO

MIN.

TYP.

MAX. UNIT CONDITIONS.

-0.1

-0.5

-10

-700

-1.2

=-20V, I

=0, T

amb

=150°C

=-5V, I

=-500mA, I

=-50mA*

=-500mA, V

=-1V*

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

BC80716

BC80725

BC80740

All bands

Transition Frequency

Output Capacitance

obo

CE(sat)

BE(on)

100

160

250

100

8.0

250

400

600

=-100mA, V

=-1V*

=-100mA, V

=-1V*

=-100mA, V

=-1V*

=-500mA, V

=-1V*

MHz

=-10mA, V

=-5V

f=35MHz

=-10V f=1MHz

*Measured under pulsed conditions.

Spice parameter data is available upon request for these devices

tba

BC80725-5BZ Related Products

	BC80725-5BZ	BC80716-5AZ	BC80740-5CZ	BC807
Description	800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3
Transistor polarity	PNP	PNP	PNP	PNP
Maximum collector current	0.8000 A	0.8000 A	0.8000 A	0.8000 A
Maximum Collector-Emitter Voltage	45 V	45 V	45 V	45 V
Processing package description	SOT-23, 3 PIN	SOT-23, 3 PIN	SOT-23, 3 PIN	SOT-23, 3 PIN
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single
Number of components	1	1	1	1
transistor applications	switch	switch	switch	switch
Transistor component materials	silicon	silicon	silicon	silicon
Maximum ambient power consumption	0.3100 W	0.3100 W	0.3100 W	0.3100 W
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	60	60	60	60
Rated crossover frequency	100 MHz	100 MHz	100 MHz	100 MHz

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