PAH20012 datasheet, PDF - EEWORLD Datasheet

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PAH20012: DescriptionSilicon Controlled Rectifier, 314A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-6; CategoryAnalog mixed-signal IC Trigger device; File Size254KB，5 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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PAH20012 Overview

Silicon Controlled Rectifier, 314A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-6

PAH20012 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X6
Contacts	6
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum DC gate trigger current	150 mA
JESD-30 code	R-XUFM-X6
Number of components	1
Number of terminals	6
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum rms on-state current	314 A
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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THYRISTOR MODULE

200A / 1200V to 1600V

PAT20012 PAT20016

PAH20012 PAH20016

FEATURES

* Isolated Base

* Dual Thyristors or Thyristor and Diode

Anti-Parallel Circuit

* High Surge Capability

* UL Recognized, File No. E187184

OUTLINE DRAWING

PAT

TYPICAL APPLICATIONS

* Rectified For General Use

PAH

Maximum Ratings

Parameter

Repetitive Peak Off-State Voltage

Non Repetitive Peak Off-State Voltage

Repetitive Peak Reverse Voltage

Non Repetitive Peak Reverse Voltage

Approx Net Weight:500g

Symbol

DRM

DSM

RRM

RSM

Grade

PAT/PAH20012

PAT/PAH20016

Unit

1200

1300

1200

1300

1600

1700

1600

1700

Max Rated

Value

Parameter

Average Rectified Output Current

RMS On-State Current

Surge On-State Current

I Squared t

Critical Rate of Turned-On Current

Peak Gate Power

Average Gate Power

Peak Gate Current

Peak Gate Voltage

Peak Gate Reverse Voltage

Operating JunctionTemperature Range

Storage Temperature Range

Isoration Voltage

Case mounting

Mounting torque

Terminals

Value per 1 Arm

O(AV)

T(RMS)

TSM

di/dt

G(AV)

RGM

Tjw

Tstg

Viso

Ftor

Conditions

50Hz Half Sine Wave condition

Tc=75°C

50 Hz Half Sine Wave,1Pulse

Non-Repetitive

2msec to 10msec

=2/3V

DRM

, I

=2 I

, Tj=125°C

=300mA, di

/dt=0.2A/µs

•

Unit

A/µs

200

314

4000

80000

100

-40 to +125

°C

-40 to +125

°C

Base Plate to Terminals, AC1min

2500

M6 Screw

2.5 to 3.5

•

M8 Screw

9.0 to 10.0

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