FJV42 NPN High Voltage Transistor
March 2007
FJV42
NPN
High Voltage Transistor
3
2
1
SOT-23
Marking: 1DF
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
350
350
6
500
-55~150
350
Units
V
V
V
mA
°C
mW
T
STG
P
C
Storage Temperature Range
Collector Power Dissipation
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
R
TH
(j-a)
Parameter
Thermal Resistance, Junction to Ambiet
Value
357
Units
°C/W
Electrical Characteristics
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
*
Test Condition
I
C
= 5.0 mA, I
B
= 0
I
C
= 100 uA, I
E
= 0
I
E
= 100 uA, I
C
= 0
V
CB
= 200 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 10 mA, V
CE
= 20V, f =100 MHz
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
MIN
350
350
6
MAX
Units
V
V
V
0.1
0.1
25
40
40
0.5
0.9
50
3
uA
uA
V
CE(
sat
)
V
BE(
sat
)
f
T
C
cb
Collector-Emitter Saturation Voltage
*
Base-Emitter Breakdown Voltage
*
Current Gain - Bandwidth Product
Output
Capacitance
V
V
MHz
pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJV42 Rev. A
FJV42 NPN High Voltage Transistor
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
V
CE
= 10V
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
1
10
100
0.01
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
120
100
C
cb
[pF], CAPACITANCE
V
CE
= 20V
80
10
60
40
20
1
0.1
0
1
10
100
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
2
FJV42 Rev. A
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FJV42 NPN High Voltage Transistor
FJV42 NPN High Voltage Transistor
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or In Design
First Production
Definition
This datasheet contains the design specifications for product develop-
ment. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will
be published at a later date.Fairchild Semiconductor reserves the right
to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice in order
to improve design.
This datasheet contains specifications on a product that has been dis-
continued by Fairchild semiconductor.The datasheet is printed for ref-
erence information only.
Rev. I23
No Identification Needed
Full Production
Obsolete
Not In Production
4
FJV42 Rev. A
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