IRF730-030 datasheet, PDF - EEWORLD Datasheet

IRF730-030: DescriptionPower Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size69KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRF730-030 Overview

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	290 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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