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FGD3N60LSD

Description
IGBT
File Size715KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FGD3N60LSD Overview

IGBT

FGD3N60LSD IGBT
September 2006
FGD3N60LSD
IGBT
Features
• High Current Capability
• Very Low Saturation Voltage : V
CE(sat)
= 1.2 V @ I
C
= 3A
• High Input Impedance
tm
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
C
C
G
G
E
D-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Derating Factor
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
(1)
FGD3N60LSD
600
±
25
6
3
25
3
25
40
0.32
-55 to +150
-55 to +150
250
Units
V
V
A
A
A
A
A
W
W/°C
°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
Max.
3.1
100
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGD3N60LSD Rev. B

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