3.2 mm x 5.0 mm Ceramic Low Noise SMD VCXO
LVCMOS/LVPECL/LVDS
I641 - Series
Product Features
Small Surface Mount Package
Low RMS Phase Jitter
Frequencies to 1500 MHz
Pb Free/ RoHS Compliant
Leadfree Processing
Applications
xDSL
Broadcast video
Wireless Base Stations
Sonet /SDH
WiMAX/WLAN
Server and Storage
Ethernet/LAN/WAN
Optical modules
Clock and data recovery
FPGA/ASIC
Backplanes
GPON
Frequency
LVCMOS
LVPECL
LVDS
Output Level
LVCMOS
LVPECL
LVDS
Duty Cycle
LVCMOS
LVPECL
LVDS
Rise / Fall Time
LVCMOS
LVPECL
LVDS
Output Load
LVCMOS
LVPECL
LVDS
Frequency Stability
Supply Voltage
Current
Linearity
Pullability
Control Voltage
Input Impedance
Phase Jitter (RMS)
At 12kHz to 20 MHz
Operating Temp.
Range
Storage
10 MHz to 250 MHz
10 MHz to 1500 MHz
10 MHz to 1500 MHz
VOH=90% VDD min., VOL=10 % VDD max.
VOH=VDD-1.03V max. (Nom. Load), VOL=VDD-1.6V max. (Nom. Load)
VOD=(Diff. Output) 350mV Typ.
50% ±5% @ 50%VDD
50% ±5% @ 50%*
50% ±5% @ 50%*
3.0 ns max. (90%/10%)*
0.6 ns max. (80%/20%)*
0.6 ns max. (80%/20%)*
Recommended Pad Layout
15pF
50
to VDD - 2.0 VDC
RL=100
/CL=10pF
See Table Below
3.3 VDC ± 10%, 2.5VDC ± 5%
LVCMOS = 45 mA max., LVPECL = 65 mA max., LVDS = 35 mA max.
10% max.
See Table Below
1.65 VDC ± 1.65 VDC @ 3.3V
1.25 VDC ± 1.25 VDC @ 2.5V
50K
min.
0.5 ps typical
See Table Below
-40
C to +100
C
Pin Connection
1
Voltage Control
2
Enable/Disable or N/C
3
GND
4
Output
5
Output or N/C
6
V
DD
Dimension Units: mm
Part Number Guide
Package
Input
Voltage
3 = 3.3V
6 = 2.5V
Sample Part Number:
Stability
(in ppm)
F =
20
A =
25
B =
50
I641–31AB9H2–155.520
Enable / Disable
(Pin 2)
H = Enable
O = N/C
Operating
Temperature
1 = 0 C to +70 C
3 = -20 C to +70 C
2 = -40 C to +85 C
Pullabilty
B =
50
C =
100
Output
3 = LVCMOS
8 = LVDS
9 = LVPECL
Complimentary
Ouput (Pin 5) **
1 = N.C.
2 = Output
Frequency
I641
-155.520 MHz
NOTE: A 0.01 µF bypass capacitor is recommended between V
DD
(pin 6) and GND (pin 3) to minimize power supply noise. * Measured as percent of
waveform. ** Available on LVDS and LVPECL ouput only
.
ILSI
America
Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
11/05/13_D
Specifications subject to change without notice
Page 1
3.2 mm x 5.0 mm Ceramic Low Noise SMD VCXO
LVCMOS/LVPECL/LVDS
I641 - Series
SSB Phase Noise (typ.)
Offset
10Hz
100Hz
1kHz
10kHz
100kHz
77.76 MHz
-75 dBc/Hz
-105 dBc/Hz
-117 dBc/Hz
-123 dBc/Hz
-125 dBc/Hz
155.52 MHz
-62 dBc/Hz
-101 dBc/Hz
-112 dBc/Hz
-115 dBc/Hz
-118 dBc/Hz
622.08 MHz
-47 dBc/Hz
-79 dBc/Hz
-100 dBc/Hz
-104 dBc/Hz
-106 dBc/Hz
Typical Application:
Pb Free Solder Reflow Profile:
*Units are backward compatible with 240C reflow processes
Package Information:
MSL = N.A. (package does not contain plastic, storage life is
unlimited under normal room conditions).
Termination = e4 (Au over Ni over W base metalization).
ILSI
America
Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
11/05/13_D
Specifications subject to change without notice
Page 2
3.2 mm x 5.0 mm Ceramic Low Noise SMD VCXO
LVCMOS/LVPECL/LVDS
I641 - Series
Tape and Reel Information:
Quantity per
Reel
A
B
C
D
E
F
1000
16 +/-.3
8 +/-.2
7.5 +/-.2
17.5 +/-1
50 / 60 / 80
180 / 250
Environmental Specifications
Thermal Shock
Moisture Resistance
Mechanical Shock
Mechanical Vibration
Resistance to Soldering Heat
Hazardous Substance
Solderability
Terminal Strength
Gross Leak
Fine Leak
Solvent Resistance
MIL-STD-883, Method 1011, Condition A
MIL-STD-883, Method 1004
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 2007, Condition A
J-STD-020C, Table 5-2 Pb-free devices (except 2 cycles max)
Pb-Free / RoHS / Green Compliant
JESD22-B102-D Method 2 (Preconditioning E)
MIL-STD-883, Method 2004, Test Condition D
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 1014, Condition A2, R1=2x10-8 atm cc/s
MIL-STD-202, Method 215
Marking
Line 1: ILSI and Date Code (YWW)
Line 2: Frequency
ILSI
America
Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
11/05/13_D
Specifications subject to change without notice
Page 3
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