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V54C3256164V-8

Description
Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
Categorystorage    storage   
File Size390KB,48 Pages
ManufacturerMosel Vitelic Corporation ( MVC )
Websitehttp://www.moselvitelic.com
Download Datasheet Parametric Compare View All

V54C3256164V-8 Overview

Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

V54C3256164V-8 Parametric

Parameter NameAttribute value
MakerMosel Vitelic Corporation ( MVC )
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.38 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
MOSEL VITELIC
V54C3256164V
HIGH PERFORMANCE 3.3 VOLT
16M X 16 SYNCHRONOUS DRAM
4 BANKS X 4Mbit X 16
PRELIMINARY
-75
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Cycle Time (t
CK2
)
Clock Access Time (t
AC2
) CAS Latency = 2
133MHz
7.5 ns
5.4 ns
10 ns
6 ns
-8PC
125 MHz
8 ns
6 ns
10 ns
6 ns
-8
125 MHz
8 ns
6 ns
12 ns
6 ns
Features
s
4 banks x 4Mbit x 16 organization
s
High speed data transfer rates up to 133 MHz
s
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
s
Single Pulsed RAS Interface
s
Data Mask for byte Control
s
Four Banks controlled by BA0 & BA1
s
Programmable CAS Latency: 2, 3
s
Programmable Wrap Sequence: Sequential or
Interleave
s
Programmable Burst Length:
1, 2, 4, 8 and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
s
Multiple Burst Read with Single Write Operation
s
Automatic and Controlled Precharge Command
s
Random Column Address every CLK (1-N Rule)
s
Suspend Mode and Power Down Mode
s
Auto Refresh and Self Refresh
s
Refresh Interval: 8192 cycles/64 ms
s
Available in 54 Pin 400 mil TSOP-II
s
LVTTL Interface
s
Single +3.3 V
±
0.3 V Power Supply
s
-75 parts for PC133 3-3-3 operation
s
-8PC parts for PC100 2-2-2 operation
s
-8 parts for PC100 3-2-2 operation
Description
The V54C3256164V is a four bank Synchronous
DRAM organized as 4 banks x 4Mbit x 16. The
V54C3256164V achieves high speed data transfer
rates up to 133 MHz by employing a chip architec-
ture that prefetches multiple bits and then synchro-
nizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
133 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0
°
C to 70
°
C
Package Outline
T
Access Time (ns)
-75
Power
-8
-8PC
Std.
L
Temperature
Mark
Blank
V54C3256164V Rev. 1.1 January 2000
1

V54C3256164V-8 Related Products

V54C3256164V-8 V54C3256164V-75 V54C3256164V-8PC
Description Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
Maker Mosel Vitelic Corporation ( MVC ) Mosel Vitelic Corporation ( MVC ) Mosel Vitelic Corporation ( MVC )
Parts packaging code TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2,
Contacts 54 54 54
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 5.4 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
length 22.38 mm 22.38 mm 22.38 mm
memory density 268435456 bit 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 16 16
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 54 54 54
word count 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 16MX16 16MX16 16MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL DUAL DUAL
width 10.16 mm 10.16 mm 10.16 mm
Base Number Matches 1 1 1
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