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ZTX749

Description
2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
CategoryDiscrete semiconductor    The transistor   
File Size38KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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ZTX749 Overview

2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AE

ZTX749 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-226
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code3LD, TO-226, MOLDED
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-226AE
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
ZTX749
ZTX749
PNP Low Saturation Transistor
• This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-25
-35
-5
-2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA
I
C
= -100µA
I
E
= -100µA
V
CB
= -30V
V
CB
= -30V, T
A
= 100°C
V
EB
= -4V
I
C
= -50mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= 1-00mA, V
CE
= -5V
f = 100MHz
100
70
100
75
15
Min.
-25
-35
-5
-100
-10
-100
Max.
Units
V
V
V
nA
µA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics*
300
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
-300
-500
-1.25
-1
100
mV
V
V
P
F
Small-Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Max.
1
125
Units
W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003

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Index Files: 828  151  1913  1878  2539  17  4  39  38  52 
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