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TTW3C145N16LOF

Description
Silicon Controlled Rectifier, 120A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 6 Element, ISOPACK-14
CategoryAnalog mixed-signal IC    Trigger device   
File Size301KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Silicon Controlled Rectifier, 120A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 6 Element, ISOPACK-14

TTW3C145N16LOF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeISOPACK
package instructionFLANGE MOUNT, R-XUFM-X14
Contacts14
Manufacturer packaging codeISOPACK
Reach Compliance Codecompliant
Factory Lead Time1 week
Shell connectionISOLATED
Configuration3 BANKS, ANTI-PARALLEL, 2 ELEMENTS WITH BUILT-IN THERMISTOR
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Quick connection description6G
Description of screw terminals6AK
Maximum holding current200 mA
JESD-30 codeR-XUFM-X14
Maximum leakage current10 mA
On-state non-repetitive peak current1250 A
Number of components6
Number of terminals14
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current120 A
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 145 N 16 (ISOPACK)
N
W3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
T
vj
= - 40°C...T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS on-state current (per chip)
Effektivstrom (pro Phase)
RMS current (per arm)
T
C
= 85°C
T
C
= 75°C
T
A
= 45°C, KM 11
T
A
= 45°C, KM 33
T
A
= 35°C, KM 14 (V
L
= 45l/s)
T
A
= 35°C, KM 33 (V
L
= 90l/s)
T
vj
= - 40°C...T
vj max
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRMSM
I
RMS
1600
1600
1700
120
145
170
40
59
108
131
1250
1050
7800
5500
120
V
V
V
A
A
A
A
A
A
A
A
A
A²s
A²s
A/µs
T
vj
= + 25°C...T
vj max
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 0,6A, di
G
/dt = 0,6A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
8. Kennbuchstabe / 8th letter F
I
TSM
I²t
(di/dt)
cr
(dv/dt)
cr
1000
V/µs
T
vj
= T
vj max
, i
T
= 200A
v
T
V
(T0)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
max.
1,87
0,95
3,2
V
V
mΩ
mA
V
mA
mA
V
mA
mA
mA
µs
T
vj
= T
vj max
T
vj
=T
vj max
T
vj
= 25°C, v
D
= 6V
max.
max.
max.
max.
max.
max.
max.
max.
max.
150
2,5
5,0
2,5
0,2
200
600
10
1,2
T
vj
= 25°C, v
D
= 6V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6V, R
A
= 5Ω
T
vj
= 25°C, v
D
= 6V, R
GK
20Ω
i
GM
= 0,6A, di
G
/dt = 0,6A/µs, t
g
= 10µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C, i
GM
= 0,6A, di
G
/dt = 0,6A/µs
BIP PPE 4
rev.2
25. Okt 05
A 12/05
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