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KMM366S3254AT-GL

Description
Synchronous DRAM Module, 32MX64, 6ns, CMOS
Categorystorage    storage   
File Size470KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KMM366S3254AT-GL Overview

Synchronous DRAM Module, 32MX64, 6ns, CMOS

KMM366S3254AT-GL Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionDIMM, DIMM168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density2147483648 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.016 A
Maximum slew rate1.84 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1

KMM366S3254AT-GL Related Products

KMM366S3254AT-GL KMM366S3254AT-GH
Description Synchronous DRAM Module, 32MX64, 6ns, CMOS Synchronous DRAM Module, 32MX64, 6ns, CMOS
Maker SAMSUNG SAMSUNG
package instruction DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 100 MHz 100 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168
memory density 2147483648 bit 2147483648 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64
Number of functions 1 1
Number of ports 1 1
Number of terminals 168 168
word count 33554432 words 33554432 words
character code 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 32MX64 32MX64
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
self refresh YES YES
Maximum standby current 0.016 A 0.016 A
Maximum slew rate 1.84 mA 1.84 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
Base Number Matches 1 1
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