DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5433
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Contains same chip as 2SC5007
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5433
2SC5433-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
10
1.5
65
125
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10101EJ01V0DS (1st edition)
(Previous No. P13077EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 1998
©
NEC Compound Semiconductor Devices 2002
2SC5433
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
MIN.
–
–
80
4.5
10.0
–
–
TYP.
–
–
–
7.0
12.0
1.4
–
MAX.
800
800
145
–
–
2.7
0.9
Unit
nA
nA
–
GHz
dB
dB
pF
f
T
S
21e
2
NF
C
re
Note 2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
TE
80 to 110
FB
TF
100 to 145
2
Data Sheet PU10101EJ01V0DS
2SC5433
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2.0
f = 1 MHz
150
Total Power Dissipation P
tot
(mW)
Free Air
125
100
75
50
25
1.0
0.5
0.2
0
25
50
75
100
125
150
0.1
1
2
5
10
20
50
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
V
CE
= 3 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
I
B
= 160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
5
Collector to Emitter Voltage V
CE
(V)
10
15
10
10
5
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
12
10
8
6
4
2
0
0.5
V
CE
= 3 V
f = 1 GHz
V
CE
= 3 V
DC Current Gain h
FE
100
50
20
10
0.5
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10101EJ01V0DS
3
2SC5433
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
16
Insertion Power Gain |S
21e
|
2
(dB)
25
V
CE
= 3 V
I
C
= 7 mA
20
14
12
10
8
6
4
2
0
0.5
V
CE
= 3 V
f = 1 GHz
15
MAG
10
|S
21e
|
5
2
0
0.1
0.2
0.5
1.0
2.0
5.0
1
2
5
10
20
50
Frequency f (GHz)
Collector Current I
C
(mA)
NOISE FIGURE vs. COLLECTOR CURRENT
3
V
CE
= 3 V
f = 1 GHz
Noise Figure NF (dB)
2
1
0
0.5
1
2
5
10
20
50
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10101EJ01V0DS
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