2SD1062R datasheet, PDF - EEWORLD Datasheet

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2SD1062R: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size167KB，4 Pages; ManufacturerInchange Semiconductor

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2SD1062R Overview

Transistor

2SD1062R Parametric

Parameter Name	Attribute value
Maker	Inchange Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
surface mount	NO
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-220 package

・Low

collector saturation voltage

・Complement

to type 2SB826

・Wide

area of safe operation

APPLICATIONS

・Relay

drivers,

・High-speed

inverters,

・Converters

・General

high-current switching

applications

PINNING

Base

Collector;connected to

mounting base

DESCRIPTION

2SD1062

Absolute maximum ratings (Ta=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

固电

Emitter

导½

半

Collector-base voltage

HAN

INC

SEM

Open emitter

Open base

DUT

VALUE

UNIT

℃

CONDITIONS

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

Open collector

=25℃

150

-55~150

2SD1062R Related Products

	2SD1062R	2SD1062S
Description	Transistor	Transistor
Reach Compliance Code	unknown	unknow
Base Number Matches	1	1

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