MMIC Amplifier. A Darlington configuration featuring
1 micron emitters provides high FT and excellent
thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking ca-
pacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package
utilizes a post annealing process to mitigate tin whis-
ker formation and is RoHS compliant per EU Direc-
tive 2002/95. This package is also manufactured
with green molding compounds that contain no anti-
mony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA (Typ.)
SGA-6286
SGA-6286Z
Pb
RoHS Compliant
&
Green
Package
DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
•
Now available in Lead Free, RoHS
Compliant, & Green Packaging
•
Broadband Operation: DC-5500 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
20
15
Gain (dB)
GAIN
0
-10
-20
-30
-40
0
1
2
3
4
Frequency (GHz)
5
6
Return Loss (dB)
Applications
•
PA Driver Amplifier
10
5
0
IRL
ORL
T
L
=+25ºC
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
G
Parameter
Small Signal Gain
Units
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
12.5
Typ.
13.6
12.4
11.2
18.7
17.8
35.0
33.0
5500
Max.
15.2
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 51 Ohms
I
D
= 75 mA Typ.
T
L
= 25ºC
1950 MHz
1950 MHz
1950 MHz
3.6
67
14.6
13.9
4.2
4.0
75
97
4.4
83
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-100613 Rev E
1
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit
100
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
V
S
= 8 V
R
BIAS
= 51 Ohms
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
14.0
37.0
18.7
18.8
35.7
18.4
4.0
13.9
36.0
19.0
17.4
36.3
18.6
3.9
13.6
35.0
18.7
15.8
23.8
18.8
3.9
12.4
33.0
17.8
14.6
13.9
18.8
4.2
11.2
31.4
16.8
15.5
13.4
18.5
4.4
9.6
28.1
15.2
20.6
16.4
17.0
4.8
Test Conditions:
= 75 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Absolute Maximum Ratings
Noise Figure vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
7
6
Noise Figure (dB)
5
4
3
2
0
1
2
3
Frequency (GHz)
4
5
Parameter
Max.
D evi ce C urrent
(I
D
)
Max.
D evi ce
Voltage (V
D
)
Max.
RF Input Power
Max.
Juncti on Temp
. (T
J
)
Operati ng T mp
. Range (T
L
)
e
Absolute Limit
1
50
mA
6V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
T
L
=+25ºC
Operati on of thi s devi ce beyond any one of these li mi ts may
cause permanent damage. For reli able conti nous operati on,
the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
Bi as C ondi ti ons should also sati sfy the followi ng expressi on:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T ke i nto account out of band VSWR presented by devi ces
a
such as SAW fi lters to determi ne maxi mum RF i nput power.
Reflected harmoni c levels i n saturati on are si gni fi cant.
OIP
3
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
40
+25°C
P
1dB
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
20
36
OIP
3
(dBm)
32
28
24
20
0.0
0.5
1.0
1.5
2.0
T
L
-40°C
18
P
1dB
(dBm)
16
14
+25°C
+85°C
12
10
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
T
L
2.5
-40°C
+85°C
3.0
3.5
Frequency (GHz)
Frequency (GHz)
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100613 Rev E
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
Preliminary
|
S
21
|
vs. Frequency
20
15
|S
21
|(dB)
|S
11
|(dB)
|
S
11
|
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
0
-10
V
D
= 4.0 V, I
D
= 75 mA
10
5
-20
-30
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
|
S
12
|
vs. Frequency
-10
-15
|S
12
|(dB)
-20
-25
|S
22
|(dB)
|
S
22
|
vs. Frequency
0
-10
V
D
= 4.0 V, I
D
= 75 mA
V
D
= 4.0 V, I
D
= 75 mA
-20
-30
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 51 ohms *
90
85
+85°C
V
D
vs. Temperature for Constant I
D
= 75 mA
4.6
4.4
I
D
(mA)
+25°C
-40°C
V
D
(Volts)
80
75
70
65
60
3.6
3.8
4.2
4.0
3.8
3.6
4.0
V
D
(Volts)
4.2
4.4
-40
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100613 Rev E
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R
BIAS
Application Circuit Element Values
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
V
S
1 uF
1000
pF
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
4
1
SGA-6286
3
2
C
B
RF out
Recommended Bias Resistor Values for I
D
=75mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
27
8V
51
10 V
82
12 V
110
V
S
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
L
C
C
D
C
B
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
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