Ordering number:ENN2112B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1201/2SD1801
High-Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit:mm
2045B
[2SB1201/2SD1801]
6.5
5.0
4
Features
· Adoption of FBET, MBIT processes.
· Large current capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1201/2SD1801-used sets smaller.
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1201/2SD1801]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo
http://semicon.sanyo.com/en/network
TOKYO, 110-8534 JAPAN
Bldg., 1-10,
Chome,
Ueno,
Taito-ku,
TOKYO OFFICE Tokyo Bldg., 1-10, 1
1 Chome,
Ueno,
Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5
2SB1201/2SD1801
( ) : 2SB1201
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)60
(–)50
(–)6
(–)2
(–)4
0.8
Unit
V
V
V
A
A
W
W
Tc=25˚C
15
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)1A, IB=(–)50mA
100*
40
150
(22)12
0.15
(–0.3)
(–)0.9
(–)60
(–)50
(–)6
60
(450)
550
30
0.4
(–0.7)
(–)1.2
MHz
pF
V
V
V
V
V
V
ns
ns
ns
ns
Conditions
Ratings
min
typ
max
(–)100
(–)100
560*
Unit
nA
nA
IC=(–)1A, IB=(–)50mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SB1201/2SD1801 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=25V
RB
RL
IC=10IB1= --10IB2=500mA, VCC=25V
(For PNP, the polarity is reversed.)
No.2112–2/5
2SB1201/2SD1801
--2.4
IC -- VCE
2SB1201
2.4
IC -- VCE
50m
A
40m
A
2SD1801
--2.0
2.0
A
Collector Current, IC – A
--1.6
--
A
20m
--10mA
Collector Current, IC – A
--5
0m
25mA
1.6
15mA
--1.2
--8mA
--6mA
--4mA
--2mA
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
ITR09144
1.2
8mA
--0.8
0.8
4mA
2mA
IB=0
0
0.4
0.8
1.2
1.6
2.0
2.4
ITR09145
--0.4
0.4
0
0
Collector-to-Emitter Voltage, VCE – V
--1200
Collector-to-Emitter Voltage, VCE – V
1200
IC -- VCE
--7mA
--6mA
2SB1201
IC -- VCE
7mA
6mA
2SD1801
Collector Current, IC – mA
Collector Current, IC – mA
--1000
1000
--5mA
--4mA
--3mA
5mA
800
--800
4mA
3mA
--600
600
--2mA
--1mA
IB=0
0
--2
--4
--6
--8
--10
--12
ITR09146
2mA
400
--400
1mA
200
--200
0
0
0
2
4
6
8
IB=0
10
12
ITR09147
Collector-to-Emitter Voltage, VCE – V
--2.4
Collector-to-Emitter Voltage, VCE – V
2.4
IC -- VBE
2SB1201
VCE= --2V
Collector Current, IC – A
IC -- VBE
2SD1801
VCE=2V
--2.0
2.0
Collector Current, IC – A
--1.6
1.6
--1.2
1.2
--0.8
0.8
Ta=
75
25
°
C
°
C
--25
°
C
--0.4
0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR09148
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09149
Base-to-Emitter Voltage, VBE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
1000
7
5
hFE -- IC
2SB1201
VCE= --2V
25
°
C
hFE -- IC
2SD1801
VCE=2V
DC Current Gain, hFE
3
2
Ta=75°C
DC Current Gain, hFE
3
2
--25°C
Ta=75
°C
25
°C
--25°C
100
7
5
3
2
5 7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
3
100
7
5
3
2
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC – A
ITR09150
Collector Current, IC – A
Ta=
7
25
°
5
°
C
C
--25
°
C
ITR09151
No.2112–3/5
2SB1201/2SD1801
1000
f T -- IC
2SB1201
VCB=10V
1000
f T -- IC
2SD1801
VCB=10V
Gain-Bandwidth Product, fT – MHz
5
3
2
Gain-Bandwidth Product, fT – MHz
3
7
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--10
10
2
3
5
7 --100
2
3
5
7 --1000
2
10
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC – mA
2
ITR09152
Collector Current, IC – mA
100
7
ITR09153
Cob -- VCB
2SB1201
f=1MHz
Cob -- VCB
2SD1801
f=1MHz
Output Capacitance, Cob -- pF
100
7
5
Output Capacitance, Cob -- pF
5
3
2
3
2
10
7
5
--1.0
2
3
5
7
--10
2
3
5
7 --100
ITR09154
10
7
5
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
--1000
7
Collector-to-Base Voltage, VCB -- V
1000
7
100
ITR09155
7
VCE(sat) -- IC
2SB1201
IC / IB=20
VCE(sat) -- IC
2SD1801
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
--100
7
5
3
2
100
7
5
3
2
°
C
25
Ta
°
C
=
75
--
5
7 --0.01
2
C
25
°
C
Ta=75
°
°
C
25
C
--25
°
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
--10
3
5
7 --0.1
2
3
5
7 --1.0
2
3
10
Collector Current, IC – A
--10
7
ITR09156
10
7
Collector Current, IC – A
ITR09157
VBE(sat) -- IC
2SB1201
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
VBE(sat) -- IC
2SD1801
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
5
3
2
3
2
--1.0
7
5
3
5
Ta=
--25°C
75
°C
25
°C
1.0
7
5
3
Ta=
--25°C
75
°C
25
°C
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
ITR09158
Collector Current, IC – A
ITR09159
No.2112–4/5
2SB1201/2SD1801
ASO
5
3
2
ICP=4A
1m
IC=2A
DC
16
PC -- Ta
2SB1201 / 2SD1801
s
Collector Dissipation, P
C
– W
15
14
10 m
Collector Current, IC – A
1.0
7
5
3
2
0.1
7
5
3
2
12
10
8
6
4
2
0.8
0
s
op
era
ms
100
DC
tio
op
era
nT
tio
c=
nT
a=
°
C
25
25
°
C
0.01
2
2SB1201 /
2SD1801
(For PNP, minus sign is omitted.)
Tc=25°C, Single pulse
3
5
1.0
2
3
5
7
10
2
3
No heat sink
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
7 100
ITR09160
5
Ambient Temperature, Ta – ˚C
ITR09161
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
PS No.2112–5/5
Power technology
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