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JANHCBF2N7262

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size155KB,15 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

JANHCBF2N7262 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

JANHCBF2N7262 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid113720594
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Number of components1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.8 W
surface mountNO
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 26 April 2011.
INCH-POUND
MIL-PRF-19500/657B
26 January 2011
SUPERSEDING
MIL-PRF-19500/657A
22 February 2000
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,
N AND P-CHANNEL, SILICON
VARIOUS TYPES JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N and P-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor die. Two levels of product assurance are provided for each device
type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figures 1 through 8 herein.
1.3 Maximum ratings. See the applicable performance specification sheet from table I herein.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.daps.dla.mil/.
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