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BTD1805D3

Description
Low Vcesat NPN Epitaxial Planar Transistor
File Size173KB,4 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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BTD1805D3 Overview

Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820D3
Issued Date : 2005.03.29
Revised Date :2006.04.21
Page No. : 1/ 4
BTD1805D3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
Pb-free package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD1805D3
Outline
TO-126ML
B:Base
C:Collector
E:Emitter
E C B
BTD1805D3
CYStek Product Specification
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