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2SK3402-Z-AZ

Description
Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size132KB,8 Pages
ManufacturerNEC Electronics
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2SK3402-Z-AZ Overview

Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN

2SK3402-Z-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeTO-252AB
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)36 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3402
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3402 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3386
2SK3386-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
Low On-State Resistance
R
DS(on)1
= 15 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 22 mΩ MAX. (V
GS
= 4.0 V, I
D
= 18 A)
Low C
iss
: C
iss
= 3200 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
10
µ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±36
±144
40
1.0
150
–55 to +150
35
123
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14473EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2000

2SK3402-Z-AZ Related Products

2SK3402-Z-AZ 2SK3402-AZ
Description Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN Small Signal Field-Effect Transistor, 36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, MP-3, 3 PIN
Maker NEC Electronics NEC Electronics
Parts packaging code TO-252AB TO-251
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 4 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 36 A 36 A
Maximum drain-source on-resistance 0.036 Ω 0.036 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AB TO-251
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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