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2SJ605-ZJ-AZ

Description
Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size84KB,8 Pages
ManufacturerNEC Electronics
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2SJ605-ZJ-AZ Overview

Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN

2SJ605-ZJ-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)203 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)65 A
Maximum drain-source on-resistance0.031 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SJ605
2SJ605-S
2SJ605-ZJ
2SJ605-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
Super low on-state resistance:
R
DS(on)1
= 20 mΩ MAX. (V
GS
= –10 V, I
D
= –33 A)
R
DS(on)2
= 31 mΩ MAX. (V
GS
= –4.0 V, I
D
= –33 A)
Low input capacitance
!
C
iss
= 4600 pF TYP. (V
DS
= –10 V, V
GS
= 0 A)
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
m
20
m
65
m
200
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
100
1.5
150
–55 to +150
–45
203
I
AS
E
AS
!
Notes 1.
PW
10
µ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
Ω,
V
GS
= –20
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
2000

2SJ605-ZJ-AZ Related Products

2SJ605-ZJ-AZ 2SJ605-Z-AZ 2SJ605-S-AZ 2SJ605-AZ
Description Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, TO-262, 3 PIN Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics
Parts packaging code D2PAK TO-220 TO-262AA TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 4 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 203 mJ 203 mJ 203 mJ 203 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V
Maximum drain current (ID) 65 A 65 A 65 A 65 A
Maximum drain-source on-resistance 0.031 Ω 0.031 Ω 0.031 Ω 0.031 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 2 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 200 A 200 A 200 A 200 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
JEDEC-95 code TO-263AB - TO-262AA TO-220AB
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